Characterization of dual‐junction III‐V on Si tandem solar cells with 23.7% efficiency under low concentration

Monolithic two‐terminal III‐V on Si dual‐junction solar cells, designed for low concentration applications, were fabricated by means of surface‐activated direct wafer bonding. The III‐V top cell is a heterojunction formed by an n‐Ga0.5In0.5P emitter and a p‐Al0.2Ga0.8As base. An efficiency of 21.1 ±...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Progress in photovoltaics 2019-07, Vol.27 (7), p.652-661
Hauptverfasser:	Veinberg‐Vidal, Elias, Vauche, Laura, Medjoubi, Karim, Weick, Clément, Besançon, Claire, Garcia‐Linares, Pablo, Datas, Alejandro, Kaminski‐Cachopo, Anne, Voarino, Philippe, Mur, Pierre, Decobert, Jean, Dupré, Cécilia
Format:	Artikel
Sprache:	eng
Schlagworte:	CMOS component cells Efficiency Emitters Engineering Sciences Heterojunctions III‐V on silicon tandem solar cells isotypes I‐V characterization low concentration photovoltaics (LCPV) Micro and nanotechnologies Microelectronics multijunction Optical filters Optics Photonic Photovoltaic cells pulsed multiflash solar simulator Simulation Solar cells
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!