Photoluminescence properties of Er-doped AlN films prepared by magnetron sputtering
Er-doped aluminum nitride films, containing different Er concentrations, were obtained at room temperature by reactive radio frequency magnetron sputtering. The prepared samples show a nano-columnar microstructure and the size of the columns is dependent on the magnetron power. The Er-related photol...
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| Veröffentlicht in: | Journal of luminescence 2012-09, Vol.132 (9), p.2367-2370 |
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| creator | Rinnert, H. Hussain, S.S. Brien, V. Legrand, J. Pigeat, P. |
| description | Er-doped aluminum nitride films, containing different Er concentrations, were obtained at room temperature by reactive radio frequency magnetron sputtering. The prepared samples show a nano-columnar microstructure and the size of the columns is dependent on the magnetron power. The Er-related photoluminescence (PL) was studied in relation with the temperature, the Er content and the microstructure. Steady-state PL, PL excitation spectroscopy and time-resolved PL were performed. Both visible and near infrared PL were obtained at room temperature for the as-deposited samples. It is demonstrated that the PL intensity reaches a maximum for an Er concentration equal to 1at% and that the PL efficiency is an increasing function of the magnetron power. Decay time measurements show the important role of defect related non-radiative recombination, assumed to be correlated to the presence of grain boundaries. Moreover PL excitation results demonstrate that an indirect excitation of Er3+ ions occurs for excitation wavelengths lower than 600nm.
► Er-related photoluminescence is obtained in Er-doped AlN thin films prepared at room temperature par RF sputtering. ► Er3+ ions can be directly or indirectly excited. ► The temperature quenching is weak. ► The magnetron power has a strong influence on the PL properties. |
| doi_str_mv | 10.1016/j.jlumin.2012.04.008 |
| format | Article |
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► Er-related photoluminescence is obtained in Er-doped AlN thin films prepared at room temperature par RF sputtering. ► Er3+ ions can be directly or indirectly excited. ► The temperature quenching is weak. ► The magnetron power has a strong influence on the PL properties.</description><identifier>ISSN: 0022-2313</identifier><identifier>EISSN: 1872-7883</identifier><identifier>DOI: 10.1016/j.jlumin.2012.04.008</identifier><identifier>CODEN: JLUMA8</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Aluminum nitride ; Chemical Sciences ; Condensed Matter ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Erbium ; Erbium doping ; Exact sciences and technology ; Excitation ; Grain boundaries ; Iii-v semiconductors ; Inorganic chemistry ; Magnetron sputtering ; Material chemistry ; Materials Science ; Microstructure ; Nanostructure ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of specific thin films ; Optics ; Photoluminescence ; Physics ; R.F. sputtering</subject><ispartof>Journal of luminescence, 2012-09, Vol.132 (9), p.2367-2370</ispartof><rights>2012 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c449t-2cd0443a950df6fe752fe194c47cc7a1a3ab5dcfa026f0ed83835ae904d1aebc3</citedby><cites>FETCH-LOGICAL-c449t-2cd0443a950df6fe752fe194c47cc7a1a3ab5dcfa026f0ed83835ae904d1aebc3</cites><orcidid>0000-0002-4084-0739</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jlumin.2012.04.008$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>230,314,777,781,882,3537,27905,27906,45976</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=26030316$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://hal.science/hal-02087702$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Rinnert, H.</creatorcontrib><creatorcontrib>Hussain, S.S.</creatorcontrib><creatorcontrib>Brien, V.</creatorcontrib><creatorcontrib>Legrand, J.</creatorcontrib><creatorcontrib>Pigeat, P.</creatorcontrib><title>Photoluminescence properties of Er-doped AlN films prepared by magnetron sputtering</title><title>Journal of luminescence</title><description>Er-doped aluminum nitride films, containing different Er concentrations, were obtained at room temperature by reactive radio frequency magnetron sputtering. The prepared samples show a nano-columnar microstructure and the size of the columns is dependent on the magnetron power. The Er-related photoluminescence (PL) was studied in relation with the temperature, the Er content and the microstructure. Steady-state PL, PL excitation spectroscopy and time-resolved PL were performed. Both visible and near infrared PL were obtained at room temperature for the as-deposited samples. It is demonstrated that the PL intensity reaches a maximum for an Er concentration equal to 1at% and that the PL efficiency is an increasing function of the magnetron power. Decay time measurements show the important role of defect related non-radiative recombination, assumed to be correlated to the presence of grain boundaries. Moreover PL excitation results demonstrate that an indirect excitation of Er3+ ions occurs for excitation wavelengths lower than 600nm.
► Er-related photoluminescence is obtained in Er-doped AlN thin films prepared at room temperature par RF sputtering. ► Er3+ ions can be directly or indirectly excited. ► The temperature quenching is weak. ► The magnetron power has a strong influence on the PL properties.</description><subject>Aluminum nitride</subject><subject>Chemical Sciences</subject><subject>Condensed Matter</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Erbium</subject><subject>Erbium doping</subject><subject>Exact sciences and technology</subject><subject>Excitation</subject><subject>Grain boundaries</subject><subject>Iii-v semiconductors</subject><subject>Inorganic chemistry</subject><subject>Magnetron sputtering</subject><subject>Material chemistry</subject><subject>Materials Science</subject><subject>Microstructure</subject><subject>Nanostructure</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of specific thin films</subject><subject>Optics</subject><subject>Photoluminescence</subject><subject>Physics</subject><subject>R.F. sputtering</subject><issn>0022-2313</issn><issn>1872-7883</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNp9kE1v1DAQhi0EEkvhH3DIBQkOCeOPTZwL0qoqtNIKkICzNWuPW6-SONjZSv33eEnVY0-jGT3vjOZh7D2HhgNvPx-b43Aaw9QI4KIB1QDoF2zDdSfqTmv5km0AhKiF5PI1e5PzEQBkr_sN-_XzLi7xf5qypclSNac4U1oC5Sr66irVrvSu2g3fKx-GMReAZkxldHioRrydaElxqvJ8WhZKYbp9y155HDK9e6wX7M_Xq9-X1_X-x7eby92-tkr1Sy2sA6Uk9ltwvvXUbYUn3iurOms75CjxsHXWI4jWAzkttdwi9aAcRzpYecE-rXvvcDBzCiOmBxMxmOvd3pxnIEB3HYh7UdiPK1u--3uivJgxlH-HASeKp2w4SC06CZoXVK2oTTHnRP5pNwdz9m2OZvVtzr4NKFN8l9iHxwuYLQ4-4WRDfsqKFiRI3hbuy8pRUXMfKJlsw1m8C4nsYlwMzx_6B12EmMg</recordid><startdate>20120901</startdate><enddate>20120901</enddate><creator>Rinnert, H.</creator><creator>Hussain, S.S.</creator><creator>Brien, V.</creator><creator>Legrand, J.</creator><creator>Pigeat, P.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><scope>1XC</scope><scope>VOOES</scope><orcidid>https://orcid.org/0000-0002-4084-0739</orcidid></search><sort><creationdate>20120901</creationdate><title>Photoluminescence properties of Er-doped AlN films prepared by magnetron sputtering</title><author>Rinnert, H. ; Hussain, S.S. ; Brien, V. ; Legrand, J. ; Pigeat, P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c449t-2cd0443a950df6fe752fe194c47cc7a1a3ab5dcfa026f0ed83835ae904d1aebc3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Aluminum nitride</topic><topic>Chemical Sciences</topic><topic>Condensed Matter</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Erbium</topic><topic>Erbium doping</topic><topic>Exact sciences and technology</topic><topic>Excitation</topic><topic>Grain boundaries</topic><topic>Iii-v semiconductors</topic><topic>Inorganic chemistry</topic><topic>Magnetron sputtering</topic><topic>Material chemistry</topic><topic>Materials Science</topic><topic>Microstructure</topic><topic>Nanostructure</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optical properties of specific thin films</topic><topic>Optics</topic><topic>Photoluminescence</topic><topic>Physics</topic><topic>R.F. sputtering</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Rinnert, H.</creatorcontrib><creatorcontrib>Hussain, S.S.</creatorcontrib><creatorcontrib>Brien, V.</creatorcontrib><creatorcontrib>Legrand, J.</creatorcontrib><creatorcontrib>Pigeat, P.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Hyper Article en Ligne (HAL)</collection><collection>Hyper Article en Ligne (HAL) (Open Access)</collection><jtitle>Journal of luminescence</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Rinnert, H.</au><au>Hussain, S.S.</au><au>Brien, V.</au><au>Legrand, J.</au><au>Pigeat, P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Photoluminescence properties of Er-doped AlN films prepared by magnetron sputtering</atitle><jtitle>Journal of luminescence</jtitle><date>2012-09-01</date><risdate>2012</risdate><volume>132</volume><issue>9</issue><spage>2367</spage><epage>2370</epage><pages>2367-2370</pages><issn>0022-2313</issn><eissn>1872-7883</eissn><coden>JLUMA8</coden><abstract>Er-doped aluminum nitride films, containing different Er concentrations, were obtained at room temperature by reactive radio frequency magnetron sputtering. The prepared samples show a nano-columnar microstructure and the size of the columns is dependent on the magnetron power. The Er-related photoluminescence (PL) was studied in relation with the temperature, the Er content and the microstructure. Steady-state PL, PL excitation spectroscopy and time-resolved PL were performed. Both visible and near infrared PL were obtained at room temperature for the as-deposited samples. It is demonstrated that the PL intensity reaches a maximum for an Er concentration equal to 1at% and that the PL efficiency is an increasing function of the magnetron power. Decay time measurements show the important role of defect related non-radiative recombination, assumed to be correlated to the presence of grain boundaries. Moreover PL excitation results demonstrate that an indirect excitation of Er3+ ions occurs for excitation wavelengths lower than 600nm.
► Er-related photoluminescence is obtained in Er-doped AlN thin films prepared at room temperature par RF sputtering. ► Er3+ ions can be directly or indirectly excited. ► The temperature quenching is weak. ► The magnetron power has a strong influence on the PL properties.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jlumin.2012.04.008</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0002-4084-0739</orcidid><oa>free_for_read</oa></addata></record> |
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| subjects | Aluminum nitride Chemical Sciences Condensed Matter Condensed matter: electronic structure, electrical, magnetic, and optical properties Erbium Erbium doping Exact sciences and technology Excitation Grain boundaries Iii-v semiconductors Inorganic chemistry Magnetron sputtering Material chemistry Materials Science Microstructure Nanostructure Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Optics Photoluminescence Physics R.F. sputtering |
| title | Photoluminescence properties of Er-doped AlN films prepared by magnetron sputtering |
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