Step flow growth of Mn5Ge3 films on Ge(111) at room temperature

The very first stages of the non-diffusive growth of Mn5Ge3 thin films on Ge(111) substrates are characterized by several techniques. Mn5Ge3 films are grown by molecular beam epitaxy using the co-deposition of Mn and Ge atoms at room temperature. XRD measurements demonstrate that the thin films are...

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Veröffentlicht in:	Applied surface science 2019-06, Vol.480, p.529-536
Hauptverfasser:	Petit, Matthieu, Boussadi, Amine, Heresanu, Vasile, Ranguis, Alain, Michez, Lisa
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed Matter Critical nucleation volume Engineering Sciences Interface Materials Materials Science Mn5Ge3 Molecular beam epitaxy (MBE) Non-diffusive epitaxy Physics Spintronic Step flow growth Step meandering
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