Role of the slow diffusion species in the dewetting of compounds: The case of NiSi on a Si isotope multilayer studied by atom probe tomography
Dewetting or agglomeration is a crucial process in material science since it controls the stability of thin films or can be used for film nanostructuration by formation of islands. The models developed for dewetting usually assume diffusion at the interface and/or at the surface but no direct eviden...
Gespeichert in:
Veröffentlicht in: | Acta materialia 2019-02, Vol.165, p.192-202 |
---|---|
Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | 202 |
---|---|
container_issue | |
container_start_page | 192 |
container_title | Acta materialia |
container_volume | 165 |
creator | Luo, T. Girardeaux, C. Bracht, H. Mangelinck, D. |
description | Dewetting or agglomeration is a crucial process in material science since it controls the stability of thin films or can be used for film nanostructuration by formation of islands. The models developed for dewetting usually assume diffusion at the interface and/or at the surface but no direct evidence of such diffusion was demonstrated. Moreover, these models are usually dealing with elemental materials and not with compounds in which several elements can diffuse. The mechanisms behind agglomeration of polycrystalline compound thin films are still not fully understood. In this work, Si isotope multilayers coupled with atom probe tomography (APT) are used to reveal the agglomeration mechanism of NiSi, a binary compound. The diffusion of Si, the less mobile species in NiSi, at the NiSi/Si interface is demonstrated through comparison between the three dimension redistribution of the Si isotopes determined by APT and models taking into account grooving and agglomeration. The implication for the understanding and control of agglomeration in polycrystalline compound thin films are highlighted.
[Display omitted] |
doi_str_mv | 10.1016/j.actamat.2018.11.042 |
format | Article |
fullrecord | <record><control><sourceid>hal_cross</sourceid><recordid>TN_cdi_hal_primary_oai_HAL_hal_02044750v1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S1359645418309182</els_id><sourcerecordid>oai_HAL_hal_02044750v1</sourcerecordid><originalsourceid>FETCH-LOGICAL-c390t-ad022cd7c6d3ae3dfa8db7b04d6d40898217b9bff2aaeb02cb55a01564214c5b3</originalsourceid><addsrcrecordid>eNqFUU1v1DAQjRBIlMJPQPKVQ8LYsZMsF1RVlCKtQIJytsb2pOtVEke2t9X-CX4z3m7FldM8zfuQZl5VvefQcODdx32DNuOMuRHAh4bzBqR4UV3woW9rIVX7suBWbepOKvm6epPSHoCLXsJF9ednmIiFkeUdsTSFR-b8OB6SDwtLK1lPifnliXX0SDn75f4kt2Few2Fx6RO7K5zF9JTy3f_yrFiRlelTyGElNh-m7Cc8UmQpH5wnx8yRYQ4zW2MwxAoK9xHX3fFt9WrEKdG753lZ_b75cnd9W29_fP12fbWtbbuBXKMDIazrbedapNaNODjTG5CucxKGzSB4bzZmHAUiGRDWKIXAVScFl1aZ9rL6cM7d4aTX6GeMRx3Q69urrT7tQICUvYIHXrTqrLUxpBRp_GfgoE8F6L1-LkCfCtCc61JA8X0--6gc8uAp6lTeuVhyPpLN2gX_n4S_CheTwA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Role of the slow diffusion species in the dewetting of compounds: The case of NiSi on a Si isotope multilayer studied by atom probe tomography</title><source>Elsevier ScienceDirect Journals</source><creator>Luo, T. ; Girardeaux, C. ; Bracht, H. ; Mangelinck, D.</creator><creatorcontrib>Luo, T. ; Girardeaux, C. ; Bracht, H. ; Mangelinck, D.</creatorcontrib><description>Dewetting or agglomeration is a crucial process in material science since it controls the stability of thin films or can be used for film nanostructuration by formation of islands. The models developed for dewetting usually assume diffusion at the interface and/or at the surface but no direct evidence of such diffusion was demonstrated. Moreover, these models are usually dealing with elemental materials and not with compounds in which several elements can diffuse. The mechanisms behind agglomeration of polycrystalline compound thin films are still not fully understood. In this work, Si isotope multilayers coupled with atom probe tomography (APT) are used to reveal the agglomeration mechanism of NiSi, a binary compound. The diffusion of Si, the less mobile species in NiSi, at the NiSi/Si interface is demonstrated through comparison between the three dimension redistribution of the Si isotopes determined by APT and models taking into account grooving and agglomeration. The implication for the understanding and control of agglomeration in polycrystalline compound thin films are highlighted.
[Display omitted]</description><identifier>ISSN: 1359-6454</identifier><identifier>EISSN: 1873-2453</identifier><identifier>DOI: 10.1016/j.actamat.2018.11.042</identifier><language>eng</language><publisher>Elsevier Ltd</publisher><subject>Atom probe tomography ; Condensed Matter ; Dewetting ; Interface diffusion ; Materials Science ; NiSi compound ; Physics ; Si isotope</subject><ispartof>Acta materialia, 2019-02, Vol.165, p.192-202</ispartof><rights>2018 Acta Materialia Inc.</rights><rights>Attribution - NonCommercial - NoDerivatives</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c390t-ad022cd7c6d3ae3dfa8db7b04d6d40898217b9bff2aaeb02cb55a01564214c5b3</citedby><cites>FETCH-LOGICAL-c390t-ad022cd7c6d3ae3dfa8db7b04d6d40898217b9bff2aaeb02cb55a01564214c5b3</cites><orcidid>0000-0003-2164-5505 ; 0000-0002-3429-1948 ; 0000-0002-7159-3785</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S1359645418309182$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>230,314,776,780,881,3537,27901,27902,65306</link.rule.ids><backlink>$$Uhttps://amu.hal.science/hal-02044750$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Luo, T.</creatorcontrib><creatorcontrib>Girardeaux, C.</creatorcontrib><creatorcontrib>Bracht, H.</creatorcontrib><creatorcontrib>Mangelinck, D.</creatorcontrib><title>Role of the slow diffusion species in the dewetting of compounds: The case of NiSi on a Si isotope multilayer studied by atom probe tomography</title><title>Acta materialia</title><description>Dewetting or agglomeration is a crucial process in material science since it controls the stability of thin films or can be used for film nanostructuration by formation of islands. The models developed for dewetting usually assume diffusion at the interface and/or at the surface but no direct evidence of such diffusion was demonstrated. Moreover, these models are usually dealing with elemental materials and not with compounds in which several elements can diffuse. The mechanisms behind agglomeration of polycrystalline compound thin films are still not fully understood. In this work, Si isotope multilayers coupled with atom probe tomography (APT) are used to reveal the agglomeration mechanism of NiSi, a binary compound. The diffusion of Si, the less mobile species in NiSi, at the NiSi/Si interface is demonstrated through comparison between the three dimension redistribution of the Si isotopes determined by APT and models taking into account grooving and agglomeration. The implication for the understanding and control of agglomeration in polycrystalline compound thin films are highlighted.
[Display omitted]</description><subject>Atom probe tomography</subject><subject>Condensed Matter</subject><subject>Dewetting</subject><subject>Interface diffusion</subject><subject>Materials Science</subject><subject>NiSi compound</subject><subject>Physics</subject><subject>Si isotope</subject><issn>1359-6454</issn><issn>1873-2453</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNqFUU1v1DAQjRBIlMJPQPKVQ8LYsZMsF1RVlCKtQIJytsb2pOtVEke2t9X-CX4z3m7FldM8zfuQZl5VvefQcODdx32DNuOMuRHAh4bzBqR4UV3woW9rIVX7suBWbepOKvm6epPSHoCLXsJF9ednmIiFkeUdsTSFR-b8OB6SDwtLK1lPifnliXX0SDn75f4kt2Few2Fx6RO7K5zF9JTy3f_yrFiRlelTyGElNh-m7Cc8UmQpH5wnx8yRYQ4zW2MwxAoK9xHX3fFt9WrEKdG753lZ_b75cnd9W29_fP12fbWtbbuBXKMDIazrbedapNaNODjTG5CucxKGzSB4bzZmHAUiGRDWKIXAVScFl1aZ9rL6cM7d4aTX6GeMRx3Q69urrT7tQICUvYIHXrTqrLUxpBRp_GfgoE8F6L1-LkCfCtCc61JA8X0--6gc8uAp6lTeuVhyPpLN2gX_n4S_CheTwA</recordid><startdate>20190215</startdate><enddate>20190215</enddate><creator>Luo, T.</creator><creator>Girardeaux, C.</creator><creator>Bracht, H.</creator><creator>Mangelinck, D.</creator><general>Elsevier Ltd</general><general>Elsevier</general><scope>AAYXX</scope><scope>CITATION</scope><scope>1XC</scope><scope>VOOES</scope><orcidid>https://orcid.org/0000-0003-2164-5505</orcidid><orcidid>https://orcid.org/0000-0002-3429-1948</orcidid><orcidid>https://orcid.org/0000-0002-7159-3785</orcidid></search><sort><creationdate>20190215</creationdate><title>Role of the slow diffusion species in the dewetting of compounds: The case of NiSi on a Si isotope multilayer studied by atom probe tomography</title><author>Luo, T. ; Girardeaux, C. ; Bracht, H. ; Mangelinck, D.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c390t-ad022cd7c6d3ae3dfa8db7b04d6d40898217b9bff2aaeb02cb55a01564214c5b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Atom probe tomography</topic><topic>Condensed Matter</topic><topic>Dewetting</topic><topic>Interface diffusion</topic><topic>Materials Science</topic><topic>NiSi compound</topic><topic>Physics</topic><topic>Si isotope</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Luo, T.</creatorcontrib><creatorcontrib>Girardeaux, C.</creatorcontrib><creatorcontrib>Bracht, H.</creatorcontrib><creatorcontrib>Mangelinck, D.</creatorcontrib><collection>CrossRef</collection><collection>Hyper Article en Ligne (HAL)</collection><collection>Hyper Article en Ligne (HAL) (Open Access)</collection><jtitle>Acta materialia</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Luo, T.</au><au>Girardeaux, C.</au><au>Bracht, H.</au><au>Mangelinck, D.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Role of the slow diffusion species in the dewetting of compounds: The case of NiSi on a Si isotope multilayer studied by atom probe tomography</atitle><jtitle>Acta materialia</jtitle><date>2019-02-15</date><risdate>2019</risdate><volume>165</volume><spage>192</spage><epage>202</epage><pages>192-202</pages><issn>1359-6454</issn><eissn>1873-2453</eissn><abstract>Dewetting or agglomeration is a crucial process in material science since it controls the stability of thin films or can be used for film nanostructuration by formation of islands. The models developed for dewetting usually assume diffusion at the interface and/or at the surface but no direct evidence of such diffusion was demonstrated. Moreover, these models are usually dealing with elemental materials and not with compounds in which several elements can diffuse. The mechanisms behind agglomeration of polycrystalline compound thin films are still not fully understood. In this work, Si isotope multilayers coupled with atom probe tomography (APT) are used to reveal the agglomeration mechanism of NiSi, a binary compound. The diffusion of Si, the less mobile species in NiSi, at the NiSi/Si interface is demonstrated through comparison between the three dimension redistribution of the Si isotopes determined by APT and models taking into account grooving and agglomeration. The implication for the understanding and control of agglomeration in polycrystalline compound thin films are highlighted.
[Display omitted]</abstract><pub>Elsevier Ltd</pub><doi>10.1016/j.actamat.2018.11.042</doi><tpages>11</tpages><orcidid>https://orcid.org/0000-0003-2164-5505</orcidid><orcidid>https://orcid.org/0000-0002-3429-1948</orcidid><orcidid>https://orcid.org/0000-0002-7159-3785</orcidid><oa>free_for_read</oa></addata></record> |
fulltext | fulltext |
identifier | ISSN: 1359-6454 |
ispartof | Acta materialia, 2019-02, Vol.165, p.192-202 |
issn | 1359-6454 1873-2453 |
language | eng |
recordid | cdi_hal_primary_oai_HAL_hal_02044750v1 |
source | Elsevier ScienceDirect Journals |
subjects | Atom probe tomography Condensed Matter Dewetting Interface diffusion Materials Science NiSi compound Physics Si isotope |
title | Role of the slow diffusion species in the dewetting of compounds: The case of NiSi on a Si isotope multilayer studied by atom probe tomography |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-06T04%3A01%3A23IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-hal_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Role%20of%20the%20slow%20diffusion%20species%20in%20the%20dewetting%20of%20compounds:%20The%20case%20of%20NiSi%20on%20a%20Si%20isotope%20multilayer%20studied%20by%20atom%20probe%20tomography&rft.jtitle=Acta%20materialia&rft.au=Luo,%20T.&rft.date=2019-02-15&rft.volume=165&rft.spage=192&rft.epage=202&rft.pages=192-202&rft.issn=1359-6454&rft.eissn=1873-2453&rft_id=info:doi/10.1016/j.actamat.2018.11.042&rft_dat=%3Chal_cross%3Eoai_HAL_hal_02044750v1%3C/hal_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_els_id=S1359645418309182&rfr_iscdi=true |