Superconducting Ti/TiN Thin Films for mm-Wave Absorption
Polarization-sensitive detectors at 120–500 GHz are required for the observation of the cosmic microwave background radiation. In this paper, superconducting thin films based on Ti/TiN bilayers are developed to be integrated as electromagnetic wave absorbers in suspended cooled silicon bolometers. T...
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| Veröffentlicht in: | Journal of low temperature physics 2018-12, Vol.193 (5-6), p.655-660 |
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| creator | Aliane, A. Solana, M. Rabaud, W. Saminadayar, L. Agnese, P. Goudon, V. Dussopt, L. Vialle, C. Baghe, E. Pocas, S. Carle, L. Lio Soon Shun, N. Becker, S. Reveret, V. Rodriguez, L. Hamelin, A. Poglitsch, A. Bounissou, S. Adami, O. |
| description | Polarization-sensitive detectors at 120–500 GHz are required for the observation of the cosmic microwave background radiation. In this paper, superconducting thin films based on Ti/TiN bilayers are developed to be integrated as electromagnetic wave absorbers in suspended cooled silicon bolometers. The critical temperature (
T
c
) is tuned in the range of 600–800 mK through the superconductivity proximity effect between Ti and TiN to optimize the absorption of the incident power while minimizing the heat capacity of the system at low temperature. Ti/TiN bilayer samples are fabricated on silicon with two different thicknesses (100/5 and 300/5 nm). Electrical characterizations at low temperature have been performed and revealed the effect of thermal annealing (20–250 °C) on residual stress,
T
c
, critical magnetic field (
H
c
) and resistance above
T
c
. A physical characterization by X-ray photoelectron spectroscopy provides evidences of oxidized states which may explain these effects. |
| doi_str_mv | 10.1007/s10909-018-1919-y |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_hal_p</sourceid><recordid>TN_cdi_hal_primary_oai_HAL_hal_02022611v1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2136592505</sourcerecordid><originalsourceid>FETCH-LOGICAL-c350t-ad939792b18eab9e47f987d9e0c3d1ffa269aae968bb63d1f20d823a55a6f84e3</originalsourceid><addsrcrecordid>eNp1kEFLwzAUx4MoOKcfwFvBk4e495K1TY5jqBOGHqx4DGmbbhlrM5N2sG9vS0VPnh48fv8_7_0IuUV4QIB0FhAkSAooKEqU9HRGJhinnKY8Ts_JBIAxypjES3IVwg4ApEj4hIj37mB84ZqyK1rbbKLMzjL7GmVb20RPdl-HqHI-qmv6qY8mWuTB-UNrXXNNLiq9D-bmZ07Jx9NjtlzR9dvzy3KxpgWPoaW6lFymkuUojM6lmaeVFGkpDRS8xKrSLJFaG5mIPE-GDYNSMK7jWCeVmBs-Jfdj71bv1cHbWvuTctqq1WKthh2w_rUE8Yg9ezeyB---OhNatXOdb_rzFEOexJLFEPcUjlThXQjeVL-1CGqQqUaZqpepBpnq1GfYmAk922yM_2v-P_QNRBh12w</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2136592505</pqid></control><display><type>article</type><title>Superconducting Ti/TiN Thin Films for mm-Wave Absorption</title><source>SpringerLink Journals - AutoHoldings</source><creator>Aliane, A. ; Solana, M. ; Rabaud, W. ; Saminadayar, L. ; Agnese, P. ; Goudon, V. ; Dussopt, L. ; Vialle, C. ; Baghe, E. ; Pocas, S. ; Carle, L. ; Lio Soon Shun, N. ; Becker, S. ; Reveret, V. ; Rodriguez, L. ; Hamelin, A. ; Poglitsch, A. ; Bounissou, S. ; Adami, O.</creator><creatorcontrib>Aliane, A. ; Solana, M. ; Rabaud, W. ; Saminadayar, L. ; Agnese, P. ; Goudon, V. ; Dussopt, L. ; Vialle, C. ; Baghe, E. ; Pocas, S. ; Carle, L. ; Lio Soon Shun, N. ; Becker, S. ; Reveret, V. ; Rodriguez, L. ; Hamelin, A. ; Poglitsch, A. ; Bounissou, S. ; Adami, O.</creatorcontrib><description>Polarization-sensitive detectors at 120–500 GHz are required for the observation of the cosmic microwave background radiation. In this paper, superconducting thin films based on Ti/TiN bilayers are developed to be integrated as electromagnetic wave absorbers in suspended cooled silicon bolometers. The critical temperature (
T
c
) is tuned in the range of 600–800 mK through the superconductivity proximity effect between Ti and TiN to optimize the absorption of the incident power while minimizing the heat capacity of the system at low temperature. Ti/TiN bilayer samples are fabricated on silicon with two different thicknesses (100/5 and 300/5 nm). Electrical characterizations at low temperature have been performed and revealed the effect of thermal annealing (20–250 °C) on residual stress,
T
c
, critical magnetic field (
H
c
) and resistance above
T
c
. A physical characterization by X-ray photoelectron spectroscopy provides evidences of oxidized states which may explain these effects.</description><identifier>ISSN: 0022-2291</identifier><identifier>EISSN: 1573-7357</identifier><identifier>DOI: 10.1007/s10909-018-1919-y</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Absorption ; Background radiation ; Big Bang theory ; Bilayers ; Bolometers ; Characterization and Evaluation of Materials ; Condensed Matter Physics ; Cosmic microwave background ; Electromagnetic radiation ; Low temperature physics ; Magnetic Materials ; Magnetism ; Millimeter waves ; Photoelectrons ; Physics ; Physics and Astronomy ; Proximity effect (electricity) ; Residual stress ; Silicon ; Superconductivity ; Thin films ; X ray spectra</subject><ispartof>Journal of low temperature physics, 2018-12, Vol.193 (5-6), p.655-660</ispartof><rights>Springer Science+Business Media, LLC, part of Springer Nature 2018</rights><rights>Copyright Springer Science & Business Media 2018</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c350t-ad939792b18eab9e47f987d9e0c3d1ffa269aae968bb63d1f20d823a55a6f84e3</citedby><cites>FETCH-LOGICAL-c350t-ad939792b18eab9e47f987d9e0c3d1ffa269aae968bb63d1f20d823a55a6f84e3</cites><orcidid>0000-0002-7376-148X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10909-018-1919-y$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10909-018-1919-y$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>230,314,777,781,882,27905,27906,41469,42538,51300</link.rule.ids><backlink>$$Uhttps://hal.science/hal-02022611$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Aliane, A.</creatorcontrib><creatorcontrib>Solana, M.</creatorcontrib><creatorcontrib>Rabaud, W.</creatorcontrib><creatorcontrib>Saminadayar, L.</creatorcontrib><creatorcontrib>Agnese, P.</creatorcontrib><creatorcontrib>Goudon, V.</creatorcontrib><creatorcontrib>Dussopt, L.</creatorcontrib><creatorcontrib>Vialle, C.</creatorcontrib><creatorcontrib>Baghe, E.</creatorcontrib><creatorcontrib>Pocas, S.</creatorcontrib><creatorcontrib>Carle, L.</creatorcontrib><creatorcontrib>Lio Soon Shun, N.</creatorcontrib><creatorcontrib>Becker, S.</creatorcontrib><creatorcontrib>Reveret, V.</creatorcontrib><creatorcontrib>Rodriguez, L.</creatorcontrib><creatorcontrib>Hamelin, A.</creatorcontrib><creatorcontrib>Poglitsch, A.</creatorcontrib><creatorcontrib>Bounissou, S.</creatorcontrib><creatorcontrib>Adami, O.</creatorcontrib><title>Superconducting Ti/TiN Thin Films for mm-Wave Absorption</title><title>Journal of low temperature physics</title><addtitle>J Low Temp Phys</addtitle><description>Polarization-sensitive detectors at 120–500 GHz are required for the observation of the cosmic microwave background radiation. In this paper, superconducting thin films based on Ti/TiN bilayers are developed to be integrated as electromagnetic wave absorbers in suspended cooled silicon bolometers. The critical temperature (
T
c
) is tuned in the range of 600–800 mK through the superconductivity proximity effect between Ti and TiN to optimize the absorption of the incident power while minimizing the heat capacity of the system at low temperature. Ti/TiN bilayer samples are fabricated on silicon with two different thicknesses (100/5 and 300/5 nm). Electrical characterizations at low temperature have been performed and revealed the effect of thermal annealing (20–250 °C) on residual stress,
T
c
, critical magnetic field (
H
c
) and resistance above
T
c
. A physical characterization by X-ray photoelectron spectroscopy provides evidences of oxidized states which may explain these effects.</description><subject>Absorption</subject><subject>Background radiation</subject><subject>Big Bang theory</subject><subject>Bilayers</subject><subject>Bolometers</subject><subject>Characterization and Evaluation of Materials</subject><subject>Condensed Matter Physics</subject><subject>Cosmic microwave background</subject><subject>Electromagnetic radiation</subject><subject>Low temperature physics</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>Millimeter waves</subject><subject>Photoelectrons</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Proximity effect (electricity)</subject><subject>Residual stress</subject><subject>Silicon</subject><subject>Superconductivity</subject><subject>Thin films</subject><subject>X ray spectra</subject><issn>0022-2291</issn><issn>1573-7357</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNp1kEFLwzAUx4MoOKcfwFvBk4e495K1TY5jqBOGHqx4DGmbbhlrM5N2sG9vS0VPnh48fv8_7_0IuUV4QIB0FhAkSAooKEqU9HRGJhinnKY8Ts_JBIAxypjES3IVwg4ApEj4hIj37mB84ZqyK1rbbKLMzjL7GmVb20RPdl-HqHI-qmv6qY8mWuTB-UNrXXNNLiq9D-bmZ07Jx9NjtlzR9dvzy3KxpgWPoaW6lFymkuUojM6lmaeVFGkpDRS8xKrSLJFaG5mIPE-GDYNSMK7jWCeVmBs-Jfdj71bv1cHbWvuTctqq1WKthh2w_rUE8Yg9ezeyB---OhNatXOdb_rzFEOexJLFEPcUjlThXQjeVL-1CGqQqUaZqpepBpnq1GfYmAk922yM_2v-P_QNRBh12w</recordid><startdate>20181201</startdate><enddate>20181201</enddate><creator>Aliane, A.</creator><creator>Solana, M.</creator><creator>Rabaud, W.</creator><creator>Saminadayar, L.</creator><creator>Agnese, P.</creator><creator>Goudon, V.</creator><creator>Dussopt, L.</creator><creator>Vialle, C.</creator><creator>Baghe, E.</creator><creator>Pocas, S.</creator><creator>Carle, L.</creator><creator>Lio Soon Shun, N.</creator><creator>Becker, S.</creator><creator>Reveret, V.</creator><creator>Rodriguez, L.</creator><creator>Hamelin, A.</creator><creator>Poglitsch, A.</creator><creator>Bounissou, S.</creator><creator>Adami, O.</creator><general>Springer US</general><general>Springer Nature B.V</general><general>Springer Verlag (Germany)</general><scope>AAYXX</scope><scope>CITATION</scope><scope>1XC</scope><orcidid>https://orcid.org/0000-0002-7376-148X</orcidid></search><sort><creationdate>20181201</creationdate><title>Superconducting Ti/TiN Thin Films for mm-Wave Absorption</title><author>Aliane, A. ; Solana, M. ; Rabaud, W. ; Saminadayar, L. ; Agnese, P. ; Goudon, V. ; Dussopt, L. ; Vialle, C. ; Baghe, E. ; Pocas, S. ; Carle, L. ; Lio Soon Shun, N. ; Becker, S. ; Reveret, V. ; Rodriguez, L. ; Hamelin, A. ; Poglitsch, A. ; Bounissou, S. ; Adami, O.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c350t-ad939792b18eab9e47f987d9e0c3d1ffa269aae968bb63d1f20d823a55a6f84e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Absorption</topic><topic>Background radiation</topic><topic>Big Bang theory</topic><topic>Bilayers</topic><topic>Bolometers</topic><topic>Characterization and Evaluation of Materials</topic><topic>Condensed Matter Physics</topic><topic>Cosmic microwave background</topic><topic>Electromagnetic radiation</topic><topic>Low temperature physics</topic><topic>Magnetic Materials</topic><topic>Magnetism</topic><topic>Millimeter waves</topic><topic>Photoelectrons</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Proximity effect (electricity)</topic><topic>Residual stress</topic><topic>Silicon</topic><topic>Superconductivity</topic><topic>Thin films</topic><topic>X ray spectra</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Aliane, A.</creatorcontrib><creatorcontrib>Solana, M.</creatorcontrib><creatorcontrib>Rabaud, W.</creatorcontrib><creatorcontrib>Saminadayar, L.</creatorcontrib><creatorcontrib>Agnese, P.</creatorcontrib><creatorcontrib>Goudon, V.</creatorcontrib><creatorcontrib>Dussopt, L.</creatorcontrib><creatorcontrib>Vialle, C.</creatorcontrib><creatorcontrib>Baghe, E.</creatorcontrib><creatorcontrib>Pocas, S.</creatorcontrib><creatorcontrib>Carle, L.</creatorcontrib><creatorcontrib>Lio Soon Shun, N.</creatorcontrib><creatorcontrib>Becker, S.</creatorcontrib><creatorcontrib>Reveret, V.</creatorcontrib><creatorcontrib>Rodriguez, L.</creatorcontrib><creatorcontrib>Hamelin, A.</creatorcontrib><creatorcontrib>Poglitsch, A.</creatorcontrib><creatorcontrib>Bounissou, S.</creatorcontrib><creatorcontrib>Adami, O.</creatorcontrib><collection>CrossRef</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Journal of low temperature physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Aliane, A.</au><au>Solana, M.</au><au>Rabaud, W.</au><au>Saminadayar, L.</au><au>Agnese, P.</au><au>Goudon, V.</au><au>Dussopt, L.</au><au>Vialle, C.</au><au>Baghe, E.</au><au>Pocas, S.</au><au>Carle, L.</au><au>Lio Soon Shun, N.</au><au>Becker, S.</au><au>Reveret, V.</au><au>Rodriguez, L.</au><au>Hamelin, A.</au><au>Poglitsch, A.</au><au>Bounissou, S.</au><au>Adami, O.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Superconducting Ti/TiN Thin Films for mm-Wave Absorption</atitle><jtitle>Journal of low temperature physics</jtitle><stitle>J Low Temp Phys</stitle><date>2018-12-01</date><risdate>2018</risdate><volume>193</volume><issue>5-6</issue><spage>655</spage><epage>660</epage><pages>655-660</pages><issn>0022-2291</issn><eissn>1573-7357</eissn><abstract>Polarization-sensitive detectors at 120–500 GHz are required for the observation of the cosmic microwave background radiation. In this paper, superconducting thin films based on Ti/TiN bilayers are developed to be integrated as electromagnetic wave absorbers in suspended cooled silicon bolometers. The critical temperature (
T
c
) is tuned in the range of 600–800 mK through the superconductivity proximity effect between Ti and TiN to optimize the absorption of the incident power while minimizing the heat capacity of the system at low temperature. Ti/TiN bilayer samples are fabricated on silicon with two different thicknesses (100/5 and 300/5 nm). Electrical characterizations at low temperature have been performed and revealed the effect of thermal annealing (20–250 °C) on residual stress,
T
c
, critical magnetic field (
H
c
) and resistance above
T
c
. A physical characterization by X-ray photoelectron spectroscopy provides evidences of oxidized states which may explain these effects.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10909-018-1919-y</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0002-7376-148X</orcidid></addata></record> |
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| ispartof | Journal of low temperature physics, 2018-12, Vol.193 (5-6), p.655-660 |
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| language | eng |
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| source | SpringerLink Journals - AutoHoldings |
| subjects | Absorption Background radiation Big Bang theory Bilayers Bolometers Characterization and Evaluation of Materials Condensed Matter Physics Cosmic microwave background Electromagnetic radiation Low temperature physics Magnetic Materials Magnetism Millimeter waves Photoelectrons Physics Physics and Astronomy Proximity effect (electricity) Residual stress Silicon Superconductivity Thin films X ray spectra |
| title | Superconducting Ti/TiN Thin Films for mm-Wave Absorption |
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