Insight of surface treatments for CMOS compatibility of InAs nanowires

A CMOS compatible process is presented in order to grow self-catalyzed InAs nanowires on silicon by molecular beam epitaxy. The crucial step of this process is a new in-situ surface preparation under hydrogen (gas or plasma) during the substrate degassing combined with an in-situ arsenic annealing p...

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Veröffentlicht in:	Nano research 2019-03, Vol.12 (3), p.581-586
Hauptverfasser:	Dhungana, Daya S., Hemeryck, Anne, Sartori, Nicolo, Fazzini, Pier-Francesco, Cristiano, Filadelfo, Plissard, Sébastien R.
Format:	Artikel
Sprache:	eng
Schlagworte:	Arsenic Atomic/Molecular Structure and Spectra Biomedicine Biotechnology Chemistry and Materials Science CMOS Compatibility Condensed Matter Condensed Matter Physics Degassing Density functional theory Epitaxial growth Epitaxy Growth conditions High aspect ratio Indium arsenides Materials Science Metalorganic chemical vapor deposition Molecular beam epitaxy Nanotechnology Nanowires Physics Research Article Substrates Surface preparation Vapor phase epitaxy Vapor phases Vapors
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