Standing-wave spectrometry in silicon nano-waveguides using reflection-based near-field scanning optical microscopy

Utilizing reflection-based near-field scanning optical microscopy (NSOM) to image and analyze standing-wave patterns, we present a characterization technique potentially suitable for complex photonic integrated circuits. By raster scanning along the axis of a straight nano-waveguide in tapping mode and sweeping wavelength, detailed information of propagating waves in that waveguide has been extracted from analyses in both space and wavelength domains. Our technique needs no special steps for phase stabilization, thus allowing long-duration and environment-insensitive measurements. As a proof-of-concept test, in a silicon single-mode waveguide with a few of etched holes, the locations and reflection strengths of the inner defects have been quantified. The measurement uncertainty of the reflection amplitude is less than 25% at current stage. Our technique paves the way for non-destructively diagnosing photonic circuits on a chip with sub-wavelength spatial resolution and detailed information extraction.