Experimental Demonstration of Operational Z 2 -FET Memory Matrix

In this letter, a functional Z 2 -FET DRAM memory matrix is experimentally demonstrated for the first time. Word-level operation with simultaneous reading and programming accesses is successfully proved. Disturbance is also explored, and the results demonstrate bitline disturbance immunity. Furtherm...

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Veröffentlicht in:	IEEE electron device letters 2018-05, Vol.39 (5), p.660-663
Hauptverfasser:	Navarro, Santiago, Navarro, Carlos, Marquez, Carlos, El Dirani, Hassan, Galy, Philippe, Bawedin, Maryline, Pickering, Andy, Cristoloveanu, Sorin, Gamiz, Francisco
Format:	Artikel
Sprache:	eng
Schlagworte:	Engineering Sciences Micro and nanotechnologies Microelectronics
Online-Zugang:	Volltext
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