Experimental Demonstration of Operational Z 2 -FET Memory Matrix

Experimental Demonstration of Operational Z 2 -FET Memory Matrix

In this letter, a functional Z 2 -FET DRAM memory matrix is experimentally demonstrated for the first time. Word-level operation with simultaneous reading and programming accesses is successfully proved. Disturbance is also explored, and the results demonstrate bitline disturbance immunity. Furtherm...

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Veröffentlicht in:IEEE electron device letters 2018-05, Vol.39 (5), p.660-663
Hauptverfasser: Navarro, Santiago, Navarro, Carlos, Marquez, Carlos, El Dirani, Hassan, Galy, Philippe, Bawedin, Maryline, Pickering, Andy, Cristoloveanu, Sorin, Gamiz, Francisco
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Engineering Sciences
Micro and nanotechnologies
Microelectronics
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container_end_page 663
container_issue 5
container_start_page 660
container_title IEEE electron device letters
container_volume 39
creator Navarro, Santiago
Navarro, Carlos
Marquez, Carlos
El Dirani, Hassan
Galy, Philippe
Bawedin, Maryline
Pickering, Andy
Cristoloveanu, Sorin
Gamiz, Francisco
description In this letter, a functional Z 2 -FET DRAM memory matrix is experimentally demonstrated for the first time. Word-level operation with simultaneous reading and programming accesses is successfully proved. Disturbance is also explored, and the results demonstrate bitline disturbance immunity. Furthermore, the fabricated memory matrix, which includes only one selector per word-line, facilitates the scalability of the memory for increasing array dimensions.
doi_str_mv 10.1109/LED.2018.2819801
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Microelectronics
title Experimental Demonstration of Operational Z 2 -FET Memory Matrix
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