On the use of hopping conduction for the determination of dopant concentration in compensated silicon

This work explores the possibility to use the mechanism of hopping conduction – and particularly the transition temperature between band and hopping conduction – on low temperature resistivity measurements, for the control of dopants densities in p‐type compensated silicon. This work first establish...

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Veröffentlicht in:	Physica status solidi. C 2016-12, Vol.13 (10-12), p.776-781
Hauptverfasser:	Fauveau, Aurélie, Martel, Benoit, Veirman, Jordi, Dubois, Sébastien, Kaminski-Cachopo, Anne, Ducroquet, Frédérique
Format:	Artikel
Sprache:	eng
Schlagworte:	characterization Compensation Density dopant density Dopants Electrical resistivity Engineering Sciences Hopping conduction Micro and nanotechnologies Microelectronics Silicon Solid state physics Transition temperature
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