Features of conductivity of the intermetallic semiconductor n-ZrNiSn heavily doped with a Bi donor impurity

The crystal structure, distribution of the electron density of states, and the energy, kinetic, and magnetic properties of the intermetallic semiconductor n -ZrNiSn heavily doped with a Bi donor impurity have been investigated in the ranges T = 80−400 K, N D Bi ≈ 9.5 × 10 19 cm −3 ( x = 0.005)−1.9 ×...

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Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2012-07, Vol.46 (7), p.887-893
Hauptverfasser:	Romaka, V. A., Rogl, P., Stadnyk, Yu. V., Hlil, E. K., Romaka, V. V., Horyn, A. M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Analysis Condensed Matter Crystals Electric properties Electronic Properties of Semiconductors Intermetallic compounds Magnetic Materials Magnetic properties Magnetism Materials Science Physics Physics and Astronomy Semiconductors Structure
Online-Zugang:	Volltext
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