Photoreflectance spectroscopy for the study of GaAsSb/InP heterojunction bipolar transistors

This work is devoted to a photoreflectance (PR) study of single GaAsSb layers grown pseudomorphically on InP. Such antimonide alloys included in the base of heterojunction bipolar transistors (HBT) are expected to lead to high cut-off frequency transistors. However, many important parameters such as...

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Veröffentlicht in:	Thin solid films 2004-02, Vol.450 (1), p.151-154
Hauptverfasser:	Bru-Chevallier, C., Chouaib, H., Arcamone, J., Benyattou, T., Lahreche, H., Bove, P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Bipolar transistors Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronics Engineering Sciences Exact sciences and technology GaAsSb Heterojunction bipolar transistors Materials Micro and nanotechnologies Microelectronics Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optics Photonic Photoreflectance Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductors Transistors Visible and ultraviolet spectra
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