Photoreflectance study of GaAsSb ∕ InP heterostructures
Photoreflectance (PR) spectroscopy experiments are reported on GaAsSb ∕ InP heterostructures. The GaAsSb PR spectrum is studied as a function of temperature and the transition nature is shown to change from Franz-Keldysh oscillations (FKO) at room temperature to a third derivative functional form (T...
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| Veröffentlicht in: | Journal of applied physics 2005-12, Vol.98 (12), p.123524-123524-7 |
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| container_end_page | 123524-7 |
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| container_issue | 12 |
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| container_title | Journal of applied physics |
| container_volume | 98 |
| creator | Chouaib, H. Bru-Chevallier, C. Guillot, G. Lahreche, H. Bove, P. |
| description | Photoreflectance (PR) spectroscopy experiments are reported on
GaAsSb
∕
InP
heterostructures. The GaAsSb PR spectrum is studied as a function of temperature and the transition nature is shown to change from Franz-Keldysh oscillations (FKO) at room temperature to a third derivative functional form (TDFF) line shape at low temperatures. Combining both analysis (FKO and TDFF) in the same sample, we derive internal electric field and phase values of the PR transition, together with accurate values for alloy band gap energy on the whole temperature range. Type II interface recombination is shown to reduce photovoltage effects as a function of temperature. FKO are found to appear for a very weak electric field
(
8
kV
∕
cm
)
in the
GaAsSb
∕
InP
heterostructure, contrary to usual observations. This point is discussed in relation with the broadening parameter of the transition. |
| doi_str_mv | 10.1063/1.2142099 |
| format | Article |
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GaAsSb
∕
InP
heterostructures. The GaAsSb PR spectrum is studied as a function of temperature and the transition nature is shown to change from Franz-Keldysh oscillations (FKO) at room temperature to a third derivative functional form (TDFF) line shape at low temperatures. Combining both analysis (FKO and TDFF) in the same sample, we derive internal electric field and phase values of the PR transition, together with accurate values for alloy band gap energy on the whole temperature range. Type II interface recombination is shown to reduce photovoltage effects as a function of temperature. FKO are found to appear for a very weak electric field
(
8
kV
∕
cm
)
in the
GaAsSb
∕
InP
heterostructure, contrary to usual observations. This point is discussed in relation with the broadening parameter of the transition.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.2142099</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>American Institute of Physics</publisher><subject>Engineering Sciences ; Micro and nanotechnologies ; Microelectronics</subject><ispartof>Journal of applied physics, 2005-12, Vol.98 (12), p.123524-123524-7</ispartof><rights>2005 American Institute of Physics</rights><rights>Attribution - NonCommercial</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c324t-f7b2514fe272305ace84a8b38dd1e6e9aaeb1a823944f5143783926b1d42afc3</citedby><cites>FETCH-LOGICAL-c324t-f7b2514fe272305ace84a8b38dd1e6e9aaeb1a823944f5143783926b1d42afc3</cites><orcidid>0000-0002-1800-2579</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/jap/article-lookup/doi/10.1063/1.2142099$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>230,314,780,784,794,885,1559,4512,27924,27925,76384,76390</link.rule.ids><backlink>$$Uhttps://hal.science/hal-01975903$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Chouaib, H.</creatorcontrib><creatorcontrib>Bru-Chevallier, C.</creatorcontrib><creatorcontrib>Guillot, G.</creatorcontrib><creatorcontrib>Lahreche, H.</creatorcontrib><creatorcontrib>Bove, P.</creatorcontrib><title>Photoreflectance study of GaAsSb ∕ InP heterostructures</title><title>Journal of applied physics</title><description>Photoreflectance (PR) spectroscopy experiments are reported on
GaAsSb
∕
InP
heterostructures. The GaAsSb PR spectrum is studied as a function of temperature and the transition nature is shown to change from Franz-Keldysh oscillations (FKO) at room temperature to a third derivative functional form (TDFF) line shape at low temperatures. Combining both analysis (FKO and TDFF) in the same sample, we derive internal electric field and phase values of the PR transition, together with accurate values for alloy band gap energy on the whole temperature range. Type II interface recombination is shown to reduce photovoltage effects as a function of temperature. FKO are found to appear for a very weak electric field
(
8
kV
∕
cm
)
in the
GaAsSb
∕
InP
heterostructure, contrary to usual observations. This point is discussed in relation with the broadening parameter of the transition.</description><subject>Engineering Sciences</subject><subject>Micro and nanotechnologies</subject><subject>Microelectronics</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNp1kMFKAzEQhoMoWKsH32CvHrbOJNnd5CKUom2hYMHew2w2oStrVzap0DfwBXxBn6RbWhQETwPD9w__fIzdIowQcnGPI46Sg9ZnbICgdFpkGZyzAQDHVOlCX7KrEF4BEJXQA6aX6za2nfONs5E21iUhbqtd0vpkSuPwUibfn1_JfLNM1i66rg2x29q47Vy4ZheemuBuTnPIVk-Pq8ksXTxP55PxIrWCy5j6ouQZSu94wQVkZJ2SpEqhqgpd7jSRK5EUF1pK34Oi6HvxvMRKcvJWDNnd8eyaGvPe1W_U7UxLtZmNF-awA9RFpkF84C9r-6Khf-ongGAOegyak56efTiywdaRYt1u_of_OjK9I7EHdipsYQ</recordid><startdate>20051215</startdate><enddate>20051215</enddate><creator>Chouaib, H.</creator><creator>Bru-Chevallier, C.</creator><creator>Guillot, G.</creator><creator>Lahreche, H.</creator><creator>Bove, P.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>1XC</scope><scope>VOOES</scope><orcidid>https://orcid.org/0000-0002-1800-2579</orcidid></search><sort><creationdate>20051215</creationdate><title>Photoreflectance study of GaAsSb ∕ InP heterostructures</title><author>Chouaib, H. ; Bru-Chevallier, C. ; Guillot, G. ; Lahreche, H. ; Bove, P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c324t-f7b2514fe272305ace84a8b38dd1e6e9aaeb1a823944f5143783926b1d42afc3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Engineering Sciences</topic><topic>Micro and nanotechnologies</topic><topic>Microelectronics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chouaib, H.</creatorcontrib><creatorcontrib>Bru-Chevallier, C.</creatorcontrib><creatorcontrib>Guillot, G.</creatorcontrib><creatorcontrib>Lahreche, H.</creatorcontrib><creatorcontrib>Bove, P.</creatorcontrib><collection>CrossRef</collection><collection>Hyper Article en Ligne (HAL)</collection><collection>Hyper Article en Ligne (HAL) (Open Access)</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chouaib, H.</au><au>Bru-Chevallier, C.</au><au>Guillot, G.</au><au>Lahreche, H.</au><au>Bove, P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Photoreflectance study of GaAsSb ∕ InP heterostructures</atitle><jtitle>Journal of applied physics</jtitle><date>2005-12-15</date><risdate>2005</risdate><volume>98</volume><issue>12</issue><spage>123524</spage><epage>123524-7</epage><pages>123524-123524-7</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>Photoreflectance (PR) spectroscopy experiments are reported on
GaAsSb
∕
InP
heterostructures. The GaAsSb PR spectrum is studied as a function of temperature and the transition nature is shown to change from Franz-Keldysh oscillations (FKO) at room temperature to a third derivative functional form (TDFF) line shape at low temperatures. Combining both analysis (FKO and TDFF) in the same sample, we derive internal electric field and phase values of the PR transition, together with accurate values for alloy band gap energy on the whole temperature range. Type II interface recombination is shown to reduce photovoltage effects as a function of temperature. FKO are found to appear for a very weak electric field
(
8
kV
∕
cm
)
in the
GaAsSb
∕
InP
heterostructure, contrary to usual observations. This point is discussed in relation with the broadening parameter of the transition.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.2142099</doi><orcidid>https://orcid.org/0000-0002-1800-2579</orcidid><oa>free_for_read</oa></addata></record> |
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| ispartof | Journal of applied physics, 2005-12, Vol.98 (12), p.123524-123524-7 |
| issn | 0021-8979 1089-7550 |
| language | eng |
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| source | AIP Journals Complete; AIP Digital Archive |
| subjects | Engineering Sciences Micro and nanotechnologies Microelectronics |
| title | Photoreflectance study of GaAsSb ∕ InP heterostructures |
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