High Q whispering gallery modes in GaAs/AlAs pillar microcavities

High Q whispering gallery modes in GaAs/AlAs pillar microcavities

We report the observation of whispering gallery modes (WGM) in high quality GaAs/AlAs pillar microcavities defined by electron-beam lithography and electron cyclotron resonance reactive ion etching. Photoluminescence experiments, conducted using InAs quantum dots as an internal probe, reveal a remar...

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Veröffentlicht in:Optics express 2007-12, Vol.15 (25), p.17291-17304
Hauptverfasser: Nowicki-Bringuier, Y-R, Claudon, J, Böckler, C, Reitzenstein, S, Kamp, M, Morand, A, Forchel, A, Gérard, J M
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Optics
Photonic
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container_end_page 17304
container_issue 25
container_start_page 17291
container_title Optics express
container_volume 15
creator Nowicki-Bringuier, Y-R
Claudon, J
Böckler, C
Reitzenstein, S
Kamp, M
Morand, A
Forchel, A
Gérard, J M
description We report the observation of whispering gallery modes (WGM) in high quality GaAs/AlAs pillar microcavities defined by electron-beam lithography and electron cyclotron resonance reactive ion etching. Photoluminescence experiments, conducted using InAs quantum dots as an internal probe, reveal a remarkably simple WGM spectrum, consisting of a single series of TE modes. For diameters ranging from 3 to 4 mum, Q-factors in excess of 15 000 were measured, allowing for WGM lasing. Noticeably, sub-micron diameter micropillars also display high Qs (~ 1000), close to the limit set by intrinsic radiative losses. These results open the way to the development of original microlasers and improved quantum-dot single photon sources.
doi_str_mv 10.1364/OE.15.017291
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subjects Engineering Sciences
Optics
Photonic
title High Q whispering gallery modes in GaAs/AlAs pillar microcavities
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