Influence of the Aminated Conditions on the pH Sensitivity of Silica and Amorphous Silicon Film

Silicon nitride has been widely used as a pH sensitive membrane of the ion sensitive field e#ect transistor (ISFET) thanks to the high reactivity of the SiNH2 sites to the H f ions. In this paper, we report experimental results on the H+ sensitivity of silica and amorphous silicon aminated films, ob...

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Veröffentlicht in:Journal of the European Ceramic Society 1997, Vol.17 (15-16), p.202-2024
Hauptverfasser: Baccar, Z.M., Jaffrezic-Renault, N., Fourmond, E., Lemiti, M., Grekov, F.F.
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container_issue 15-16
container_start_page 202
container_title Journal of the European Ceramic Society
container_volume 17
creator Baccar, Z.M.
Jaffrezic-Renault, N.
Fourmond, E.
Lemiti, M.
Grekov, F.F.
description Silicon nitride has been widely used as a pH sensitive membrane of the ion sensitive field e#ect transistor (ISFET) thanks to the high reactivity of the SiNH2 sites to the H f ions. In this paper, we report experimental results on the H+ sensitivity of silica and amorphous silicon aminated films, obtained by the photo-CVD. We have studied the dependence of their response to pH as a function of the time and the temperature of amination of thejIm. The response of the aminatedjilms (silica and amorphous silicon) is quasi-Nernstian for amination exposure time higher than 1 min, deposited at temperature lower than 200°C. A theoretical model of deposition is presented. It can explain the influence of the deposition conditions. Published by Elsevier Science Limited.
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subjects Condensed Matter
Engineering Sciences
Materials Science
Micro and nanotechnologies
Microelectronics
Physics
title Influence of the Aminated Conditions on the pH Sensitivity of Silica and Amorphous Silicon Film
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