Extraction of the gate capacitance coupling coefficient in floating gate non-volatile memories: Statistical study of the effect of mismatching between floating gate memory and reference transistor in dummy cell extraction methods
This paper presents an experimental comparison of dummy cell extraction methods of the gate capacitance coupling coefficient for floating gate non-volatile memory structures from different geometries and technologies. These results show the significant influence of mismatching floating gate devices...
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| Veröffentlicht in: | Solid-state electronics 2007-04, Vol.51 (4), p.585-592 |
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| container_title | Solid-state electronics |
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| creator | Rafhay, Quentin Beug, M. Florian Duane, Russell |
| description | This paper presents an experimental comparison of dummy cell extraction methods of the gate capacitance coupling coefficient for floating gate non-volatile memory structures from different geometries and technologies. These results show the significant influence of mismatching floating gate devices and reference transistors on the extraction of the gate capacitance coupling coefficient. In addition, it demonstrates the accuracy of the new bulk bias dummy cell extraction method and the importance of the
β function, introduced recently in [Duane R, Beug F, Mathewson A. Novel capacitance coupling coefficient measurement methodology for floating gate non-volatile memory devices. IEEE Electr Dev Lett 2005;26(7):507–9], to determine matching pairs of floating gate memory and reference transistor. |
| doi_str_mv | 10.1016/j.sse.2007.02.012 |
| format | Article |
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| ispartof | Solid-state electronics, 2007-04, Vol.51 (4), p.585-592 |
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| language | eng |
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| source | Elsevier ScienceDirect Journals Complete - AutoHoldings |
| subjects | Dummy cell extraction method Engineering Sciences Floating gate flash non-volatile memory Gate capacitance coupling coefficient Micro and nanotechnologies Microelectronics Mismatching Reference transistor |
| title | Extraction of the gate capacitance coupling coefficient in floating gate non-volatile memories: Statistical study of the effect of mismatching between floating gate memory and reference transistor in dummy cell extraction methods |
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