Kinetics study of NiPt(10 at.%)/Si0.7Ge0.3 solid state reactions

•Phase sequence of solid state reactions of ultra-thin 7nm NiPt(10%) films with a Si0.7Ge0.3 layer.•In situ X-ray diffraction and sheet resistance (four point probes) measurements.•Hexagonal θ-(Ni1−yPty)2(Si1−xGex).•Kinetics study by Kissinger analysis and finite difference simulations. For 14nm nod...

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Veröffentlicht in:	Microelectronic engineering 2014-05, Vol.120, p.163-167
Hauptverfasser:	Bourjot, E., Putero, M., Perrin-Pellegrino, C., Gergaud, P., Gregoire, M., Nemouchi, F., Mangelinck, D.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Contact resistance, contact potential Diffusion in nanoscale solids Diffusion in solids Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Electronic transport in multilayers, nanoscale materials and structures Electronics Engineering Sciences Exact sciences and technology Germanosilicidation In situ sheet resistance In situ X-ray diffraction Kinetics Materials Phase sequence Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Solid-state reactions Transistors Transport properties of condensed matter (nonelectronic)
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