Hall Effect Characterization of 4H-SiC MOSFETs: Influence of Nitrogen Channel Implantation

Effect of a shallow nitrogen implantation in the channel region of n-channel 4H-SiC Hall bar MOSFETs on their electrical properties has been characterized by Hall effect. A significant improvement of Hall mobility in normally-off devices is observed with increasing nitrogen implantation dose up to 1...

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Veröffentlicht in:	Materials science forum 2013-01, Vol.740-742, p.525-528
Hauptverfasser:	Strenger, Christian, Uhnevionak, V., Bobo, J.F., Bedel-Pereira, E., Burenkov, A., Cristiano, F., Mortet, V., Bauer, Anton J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Channels Condensed Matter Coulomb friction Electrical properties Engineering Sciences Hall effect Implantation Materials Materials Science Medical devices Micro and nanotechnologies Microelectronics MOSFETs Physics Scattering
Online-Zugang:	Volltext
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