Comprehensive description of the electro-optic effects in strained silicon waveguides

We present a novel and comprehensive analysis method that considers both the plasma-dispersion effect and the strain-induced Pockels effect to faithfully describe the electro-optic effects taking place in a strained silicon waveguide under an applied voltage. The change in carrier distribution arisi...

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Veröffentlicht in:	Journal of applied physics 2017-10, Vol.122 (15)
Hauptverfasser:	Damas, Pedro, Berciano, Mathias, Marcaud, Guillaume, Alonso Ramos, Carlos, Marris-Morini, Delphine, Cassan, Eric, Vivien, Laurent
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Carrier density Concentration gradient Electric potential Physics Silicon Waveguides
Online-Zugang:	Volltext
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