SiC Current Limiting FETs (CLFs) for DC Applications

To address safety issue of DC networks in distribution and generation plants, a specific Current Limiting FET has been design. The fabricated power switch is able to operate in both forward and reverse conduction mode. Short-circuit time to failure has been adjust and a current sensing electrode as...

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Veröffentlicht in:Materials science forum 2014-02, Vol.778-780, p.895-898
Hauptverfasser: Tournier, Dominique, Godignon, Philippe, de Palma, Jean François, Niu, Shi Qin
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Godignon, Philippe
de Palma, Jean François
Niu, Shi Qin
description To address safety issue of DC networks in distribution and generation plants, a specific Current Limiting FET has been design. The fabricated power switch is able to operate in both forward and reverse conduction mode. Short-circuit time to failure has been adjust and a current sensing electrode as been added to ease the monitoring and the drive of this switch. Fabricated devices have been packaged in TO3 metal can, providing good heat conduction and durability. A maximum short circuit energy of 70J/cm2 as been measured for a IN = 6 A VBR = 1800 V rated device, corresponding to a short-circuit time before failure of tCC = 21ms under VDC = 300 V .
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fullrecord <record><control><sourceid>proquest_hal_p</sourceid><recordid>TN_cdi_hal_primary_oai_HAL_hal_01857349v1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1651427721</sourcerecordid><originalsourceid>FETCH-LOGICAL-c407t-718fa07cb7016fab86f70b5ee03410c140d4ad69f80e46d4aa894645febee2263</originalsourceid><addsrcrecordid>eNqV0E9PwyAAh2FiNHFOv0OPm0k7aPnX4-ycmtR4mJ4JZeBYurZC6-K3l6VGz54g5Md7eAC4RTDBMOWL4_GYeGV101tjVdLofvG8WSeM8ZhxmPCcnIEJojSNc0bSczCBKSExwYxegivv9xBmiCM6AXhji6gYnAupqLQH29vmPVrfv_poVpRrP49M66JVES27rrZK9rZt_DW4MLL2-ubnnIK38KN4jMuXh6diWcYKQ9bHDHEjIVMVg4gaWXFqGKyI1jDDCCqE4RbLLc0NhxrTcJc8xxQToyut05RmUzAfuztZi87Zg3RfopVWPC5LcXqDiBOW4fwThe1s3Hau_Ri078XBeqXrWja6HbxAlCCcMpaepnfjVLnWe6fNbxtBceIVgVf88YrAKwKvCLwi8IrAGyKrMdI72fheq53Yt4Nrgsd_Mt-mjIrO</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1651427721</pqid></control><display><type>article</type><title>SiC Current Limiting FETs (CLFs) for DC Applications</title><source>Scientific.net Journals</source><creator>Tournier, Dominique ; Godignon, Philippe ; de Palma, Jean François ; Niu, Shi Qin</creator><creatorcontrib>Tournier, Dominique ; Godignon, Philippe ; de Palma, Jean François ; Niu, Shi Qin</creatorcontrib><description>To address safety issue of DC networks in distribution and generation plants, a specific Current Limiting FET has been design. The fabricated power switch is able to operate in both forward and reverse conduction mode. Short-circuit time to failure has been adjust and a current sensing electrode as been added to ease the monitoring and the drive of this switch. Fabricated devices have been packaged in TO3 metal can, providing good heat conduction and durability. A maximum short circuit energy of 70J/cm2 as been measured for a IN = 6 A VBR = 1800 V rated device, corresponding to a short-circuit time before failure of tCC = 21ms under VDC = 300 V .</description><identifier>ISSN: 0255-5476</identifier><identifier>ISSN: 1662-9752</identifier><identifier>EISSN: 1662-9752</identifier><identifier>EISSN: 1662-9760</identifier><identifier>DOI: 10.4028/www.scientific.net/MSF.778-780.895</identifier><language>eng</language><publisher>Trans Tech Publications Ltd</publisher><subject>Constraining ; Devices ; Direct current ; Durability ; Electric power ; Electrodes ; Electronics ; Engineering Sciences ; Failure ; Silicon carbide ; Switches</subject><ispartof>Materials science forum, 2014-02, Vol.778-780, p.895-898</ispartof><rights>2014 Trans Tech Publications Ltd</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c407t-718fa07cb7016fab86f70b5ee03410c140d4ad69f80e46d4aa894645febee2263</citedby><cites>FETCH-LOGICAL-c407t-718fa07cb7016fab86f70b5ee03410c140d4ad69f80e46d4aa894645febee2263</cites><orcidid>0000-0001-7473-0039</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttps://www.scientific.net/Image/TitleCover/2984?width=600</thumbnail><link.rule.ids>230,314,776,780,881,27901,27902</link.rule.ids><backlink>$$Uhttps://hal.science/hal-01857349$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Tournier, Dominique</creatorcontrib><creatorcontrib>Godignon, Philippe</creatorcontrib><creatorcontrib>de Palma, Jean François</creatorcontrib><creatorcontrib>Niu, Shi Qin</creatorcontrib><title>SiC Current Limiting FETs (CLFs) for DC Applications</title><title>Materials science forum</title><description>To address safety issue of DC networks in distribution and generation plants, a specific Current Limiting FET has been design. The fabricated power switch is able to operate in both forward and reverse conduction mode. Short-circuit time to failure has been adjust and a current sensing electrode as been added to ease the monitoring and the drive of this switch. Fabricated devices have been packaged in TO3 metal can, providing good heat conduction and durability. A maximum short circuit energy of 70J/cm2 as been measured for a IN = 6 A VBR = 1800 V rated device, corresponding to a short-circuit time before failure of tCC = 21ms under VDC = 300 V .</description><subject>Constraining</subject><subject>Devices</subject><subject>Direct current</subject><subject>Durability</subject><subject>Electric power</subject><subject>Electrodes</subject><subject>Electronics</subject><subject>Engineering Sciences</subject><subject>Failure</subject><subject>Silicon carbide</subject><subject>Switches</subject><issn>0255-5476</issn><issn>1662-9752</issn><issn>1662-9752</issn><issn>1662-9760</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNqV0E9PwyAAh2FiNHFOv0OPm0k7aPnX4-ycmtR4mJ4JZeBYurZC6-K3l6VGz54g5Md7eAC4RTDBMOWL4_GYeGV101tjVdLofvG8WSeM8ZhxmPCcnIEJojSNc0bSczCBKSExwYxegivv9xBmiCM6AXhji6gYnAupqLQH29vmPVrfv_poVpRrP49M66JVES27rrZK9rZt_DW4MLL2-ubnnIK38KN4jMuXh6diWcYKQ9bHDHEjIVMVg4gaWXFqGKyI1jDDCCqE4RbLLc0NhxrTcJc8xxQToyut05RmUzAfuztZi87Zg3RfopVWPC5LcXqDiBOW4fwThe1s3Hau_Ri078XBeqXrWja6HbxAlCCcMpaepnfjVLnWe6fNbxtBceIVgVf88YrAKwKvCLwi8IrAGyKrMdI72fheq53Yt4Nrgsd_Mt-mjIrO</recordid><startdate>20140226</startdate><enddate>20140226</enddate><creator>Tournier, Dominique</creator><creator>Godignon, Philippe</creator><creator>de Palma, Jean François</creator><creator>Niu, Shi Qin</creator><general>Trans Tech Publications Ltd</general><general>Trans Tech Publications Inc</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><scope>1XC</scope><orcidid>https://orcid.org/0000-0001-7473-0039</orcidid></search><sort><creationdate>20140226</creationdate><title>SiC Current Limiting FETs (CLFs) for DC Applications</title><author>Tournier, Dominique ; Godignon, Philippe ; de Palma, Jean François ; Niu, Shi Qin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c407t-718fa07cb7016fab86f70b5ee03410c140d4ad69f80e46d4aa894645febee2263</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Constraining</topic><topic>Devices</topic><topic>Direct current</topic><topic>Durability</topic><topic>Electric power</topic><topic>Electrodes</topic><topic>Electronics</topic><topic>Engineering Sciences</topic><topic>Failure</topic><topic>Silicon carbide</topic><topic>Switches</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tournier, Dominique</creatorcontrib><creatorcontrib>Godignon, Philippe</creatorcontrib><creatorcontrib>de Palma, Jean François</creatorcontrib><creatorcontrib>Niu, Shi Qin</creatorcontrib><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Materials science forum</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tournier, Dominique</au><au>Godignon, Philippe</au><au>de Palma, Jean François</au><au>Niu, Shi Qin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>SiC Current Limiting FETs (CLFs) for DC Applications</atitle><jtitle>Materials science forum</jtitle><date>2014-02-26</date><risdate>2014</risdate><volume>778-780</volume><spage>895</spage><epage>898</epage><pages>895-898</pages><issn>0255-5476</issn><issn>1662-9752</issn><eissn>1662-9752</eissn><eissn>1662-9760</eissn><abstract>To address safety issue of DC networks in distribution and generation plants, a specific Current Limiting FET has been design. The fabricated power switch is able to operate in both forward and reverse conduction mode. Short-circuit time to failure has been adjust and a current sensing electrode as been added to ease the monitoring and the drive of this switch. Fabricated devices have been packaged in TO3 metal can, providing good heat conduction and durability. A maximum short circuit energy of 70J/cm2 as been measured for a IN = 6 A VBR = 1800 V rated device, corresponding to a short-circuit time before failure of tCC = 21ms under VDC = 300 V .</abstract><pub>Trans Tech Publications Ltd</pub><doi>10.4028/www.scientific.net/MSF.778-780.895</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0001-7473-0039</orcidid></addata></record>
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1662-9752
1662-9752
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subjects Constraining
Devices
Direct current
Durability
Electric power
Electrodes
Electronics
Engineering Sciences
Failure
Silicon carbide
Switches
title SiC Current Limiting FETs (CLFs) for DC Applications
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-16T07%3A18%3A32IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_hal_p&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=SiC%20Current%20Limiting%20FETs%20(CLFs)%20for%20DC%20Applications&rft.jtitle=Materials%20science%20forum&rft.au=Tournier,%20Dominique&rft.date=2014-02-26&rft.volume=778-780&rft.spage=895&rft.epage=898&rft.pages=895-898&rft.issn=0255-5476&rft.eissn=1662-9752&rft_id=info:doi/10.4028/www.scientific.net/MSF.778-780.895&rft_dat=%3Cproquest_hal_p%3E1651427721%3C/proquest_hal_p%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1651427721&rft_id=info:pmid/&rfr_iscdi=true