Universal description of III-V/Si epitaxial growth processes

Here, we experimentally and theoretically clarify III-V/Si crystal growth processes. Atomically resolved microscopy shows that monodomain three-dimensional islands are observed at the early stages of AlSb, AlN, and GaP epitaxy on Si, independently of misfit. It is also shown that complete III-V/Si w...

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Veröffentlicht in:	Physical review materials 2018-06, Vol.2 (6), Article 060401
Hauptverfasser:	Lucci, I., Charbonnier, S., Pedesseau, L., Vallet, M., Cerutti, L., Rodriguez, J.-B., Tournié, E., Bernard, R., Létoublon, A., Bertru, N., Le Corre, A., Rennesson, S., Semond, F., Patriarche, G., Largeau, L., Turban, P., Ponchet, A., Cornet, C.
Format:	Artikel
Sprache:	eng
Schlagworte:	Physics
Online-Zugang:	Volltext
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