Splitting of surface-related phonons in Raman spectra of self-assembled GaN nanowires

Micro Raman spectroscopy studies have been performed on GaN nanowires grown by Plasma‐Assisted Molecular Beam Epitaxy on Silicon (111) substrate. From the analysis of experimental data, the emergence of a two peaks band located near 700 cm−1 has been attributed to the Raman scattering by surface‐rel...

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Veröffentlicht in:	Physica status solidi. C 2013-03, Vol.10 (3), p.519-522
Hauptverfasser:	Wang, J., Demangeot, F., P'︁echou, R., Ponchet, A., Cros, A., Daudin, B.
Format:	Artikel
Sprache:	eng
Schlagworte:	gallium nitride Gallium nitrides Mathematical models Nanowires Phonons Physics Raman scattering Reproduction Silicon substrates Splitting surface phonons
Online-Zugang:	Volltext
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