Realization of ultra shallow junctions by PIII: application to solar cells

The efficiency of plasma immersion ion implantation (PIII) is no more to prove for the realization of ultra shallow junctions (USJ) in semiconductor applications. Interest for the fabrication of submicrometer CMOS devices is well known, but the ability of PIII to implant quickly high doses at very l...

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Veröffentlicht in:	Surface & coatings technology 2004-08, Vol.186 (1), p.93-98
Hauptverfasser:	Torregrosa, Frank, Laviron, Cyrille, Faik, Hasnaa, Barakel, Damien, Milesi, Frédéric, Beccaccia, Sébastien
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Engineering Sciences Exact sciences and technology Materials Metals. Metallurgy Micro and nanotechnologies Microelectronics Optics Photonic Plasma immersion ion implantation Production techniques Signal and Image processing Surface treatment Ultra shallow junction
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