Investigation of electrical properties of HfO2 metal–insulator–metal (MIM) devices
This paper is devoted to the study of the electrical properties of Au/HfO 2 /TiN metal–insulator–metal (MIM) capacitors in three distinctive modes: (1) alternative mode ( C – f ), (2) dynamic regime [thermally stimulated currents, TSCs I ( T )] and (3) static mode [ I ( V )]. The electrical paramete...
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| Veröffentlicht in: | Applied physics. A, Materials science & processing Materials science & processing, 2014, Vol.116 (4), p.1647-1653 |
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| container_title | Applied physics. A, Materials science & processing |
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| creator | Khaldi, O. Jomni, F. Gonon, P. Mannequin, C. Yangui, B. |
| description | This paper is devoted to the study of the electrical properties of Au/HfO
2
/TiN metal–insulator–metal (MIM) capacitors in three distinctive modes: (1) alternative mode (
C
–
f
), (2) dynamic regime [thermally stimulated currents, TSCs
I
(
T
)] and (3) static mode [
I
(
V
)]. The electrical parameters are investigated for different temperatures. It is found that capacitance frequency
C
–
f
characteristic possesses a low-frequency dispersion that arises for high temperature (
T
> 300 °C). Accordingly, the loss factor exhibits a dielectric relaxation (with an activation energy
E
a
~ 1.13 eV) which is intrinsically related to the diffusion of oxygen vacancies. The relaxation mechanisms of electrical defects in a dynamic regime (TSCs) analysis show that defect related to the TSC peak observed at 148.5 °C (
E
a
~ 1 eV) is in agreement with impedance spectroscopy (
C
–
f
). On the other hand, when the MIM structures are analyzed in static mode, the
I
–
V
plots are governed by Schottky emission. The extrapolation of the curve at zero field gives a barrier height of 1.7 eV. |
| doi_str_mv | 10.1007/s00339-014-8292-8 |
| format | Article |
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2
/TiN metal–insulator–metal (MIM) capacitors in three distinctive modes: (1) alternative mode (
C
–
f
), (2) dynamic regime [thermally stimulated currents, TSCs
I
(
T
)] and (3) static mode [
I
(
V
)]. The electrical parameters are investigated for different temperatures. It is found that capacitance frequency
C
–
f
characteristic possesses a low-frequency dispersion that arises for high temperature (
T
> 300 °C). Accordingly, the loss factor exhibits a dielectric relaxation (with an activation energy
E
a
~ 1.13 eV) which is intrinsically related to the diffusion of oxygen vacancies. The relaxation mechanisms of electrical defects in a dynamic regime (TSCs) analysis show that defect related to the TSC peak observed at 148.5 °C (
E
a
~ 1 eV) is in agreement with impedance spectroscopy (
C
–
f
). On the other hand, when the MIM structures are analyzed in static mode, the
I
–
V
plots are governed by Schottky emission. The extrapolation of the curve at zero field gives a barrier height of 1.7 eV.</description><identifier>ISSN: 0947-8396</identifier><identifier>EISSN: 1432-0630</identifier><identifier>DOI: 10.1007/s00339-014-8292-8</identifier><language>eng</language><publisher>Berlin/Heidelberg: Springer Berlin Heidelberg</publisher><subject>Characterization and Evaluation of Materials ; Condensed Matter Physics ; Machines ; Manufacturing ; Nanotechnology ; Optical and Electronic Materials ; Physics ; Physics and Astronomy ; Processes ; Surfaces and Interfaces ; Thin Films</subject><ispartof>Applied physics. A, Materials science & processing, 2014, Vol.116 (4), p.1647-1653</ispartof><rights>Springer-Verlag Berlin Heidelberg 2014</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c392t-50c71c1662a7695d5bcb6b8e3954a6eeee0e7dda25852304e56b20ace6c091c53</citedby><cites>FETCH-LOGICAL-c392t-50c71c1662a7695d5bcb6b8e3954a6eeee0e7dda25852304e56b20ace6c091c53</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s00339-014-8292-8$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s00339-014-8292-8$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>230,314,776,780,881,27901,27902,41464,42533,51294</link.rule.ids><backlink>$$Uhttps://hal.science/hal-01798640$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Khaldi, O.</creatorcontrib><creatorcontrib>Jomni, F.</creatorcontrib><creatorcontrib>Gonon, P.</creatorcontrib><creatorcontrib>Mannequin, C.</creatorcontrib><creatorcontrib>Yangui, B.</creatorcontrib><title>Investigation of electrical properties of HfO2 metal–insulator–metal (MIM) devices</title><title>Applied physics. A, Materials science & processing</title><addtitle>Appl. Phys. A</addtitle><description>This paper is devoted to the study of the electrical properties of Au/HfO
2
/TiN metal–insulator–metal (MIM) capacitors in three distinctive modes: (1) alternative mode (
C
–
f
), (2) dynamic regime [thermally stimulated currents, TSCs
I
(
T
)] and (3) static mode [
I
(
V
)]. The electrical parameters are investigated for different temperatures. It is found that capacitance frequency
C
–
f
characteristic possesses a low-frequency dispersion that arises for high temperature (
T
> 300 °C). Accordingly, the loss factor exhibits a dielectric relaxation (with an activation energy
E
a
~ 1.13 eV) which is intrinsically related to the diffusion of oxygen vacancies. The relaxation mechanisms of electrical defects in a dynamic regime (TSCs) analysis show that defect related to the TSC peak observed at 148.5 °C (
E
a
~ 1 eV) is in agreement with impedance spectroscopy (
C
–
f
). On the other hand, when the MIM structures are analyzed in static mode, the
I
–
V
plots are governed by Schottky emission. The extrapolation of the curve at zero field gives a barrier height of 1.7 eV.</description><subject>Characterization and Evaluation of Materials</subject><subject>Condensed Matter Physics</subject><subject>Machines</subject><subject>Manufacturing</subject><subject>Nanotechnology</subject><subject>Optical and Electronic Materials</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Processes</subject><subject>Surfaces and Interfaces</subject><subject>Thin Films</subject><issn>0947-8396</issn><issn>1432-0630</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNp9kE1OwzAQhS0EEqVwAHZZ0oVh_Jt4WVVAKxV1A2wtx3GKqzSp7LQSO-7ADTkJDkUsmc2M3rxvpHkIXRO4JQD5XQRgTGEgHBdUUVycoBHhjGKQDE7RCBTPccGUPEcXMW4gFad0hF4X7cHF3q9N77s26-rMNc72wVvTZLvQ7VzovYvDYl6vaLZ1vWm-Pj59G_eN6buQ5h8tu3laPE2yyh28dfESndWmie7qt4_Ry8P982yOl6vHxWy6xJYp2mMBNieWSElNLpWoRGlLWRaOKcGNdKnA5VVlqCgEZcCdkCUFY520oIgVbIwmx7tvptG74LcmvOvOeD2fLvWgAclVITkcSPKSo9eGLsbg6j-AgB5C1McQE8P1EKIuEkOPTEzedu2C3nT70KaX_oG-AaRxdiY</recordid><startdate>2014</startdate><enddate>2014</enddate><creator>Khaldi, O.</creator><creator>Jomni, F.</creator><creator>Gonon, P.</creator><creator>Mannequin, C.</creator><creator>Yangui, B.</creator><general>Springer Berlin Heidelberg</general><general>Springer Verlag</general><scope>AAYXX</scope><scope>CITATION</scope><scope>1XC</scope></search><sort><creationdate>2014</creationdate><title>Investigation of electrical properties of HfO2 metal–insulator–metal (MIM) devices</title><author>Khaldi, O. ; Jomni, F. ; Gonon, P. ; Mannequin, C. ; Yangui, B.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c392t-50c71c1662a7695d5bcb6b8e3954a6eeee0e7dda25852304e56b20ace6c091c53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Characterization and Evaluation of Materials</topic><topic>Condensed Matter Physics</topic><topic>Machines</topic><topic>Manufacturing</topic><topic>Nanotechnology</topic><topic>Optical and Electronic Materials</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Processes</topic><topic>Surfaces and Interfaces</topic><topic>Thin Films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Khaldi, O.</creatorcontrib><creatorcontrib>Jomni, F.</creatorcontrib><creatorcontrib>Gonon, P.</creatorcontrib><creatorcontrib>Mannequin, C.</creatorcontrib><creatorcontrib>Yangui, B.</creatorcontrib><collection>CrossRef</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Applied physics. A, Materials science & processing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Khaldi, O.</au><au>Jomni, F.</au><au>Gonon, P.</au><au>Mannequin, C.</au><au>Yangui, B.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Investigation of electrical properties of HfO2 metal–insulator–metal (MIM) devices</atitle><jtitle>Applied physics. A, Materials science & processing</jtitle><stitle>Appl. Phys. A</stitle><date>2014</date><risdate>2014</risdate><volume>116</volume><issue>4</issue><spage>1647</spage><epage>1653</epage><pages>1647-1653</pages><issn>0947-8396</issn><eissn>1432-0630</eissn><abstract>This paper is devoted to the study of the electrical properties of Au/HfO
2
/TiN metal–insulator–metal (MIM) capacitors in three distinctive modes: (1) alternative mode (
C
–
f
), (2) dynamic regime [thermally stimulated currents, TSCs
I
(
T
)] and (3) static mode [
I
(
V
)]. The electrical parameters are investigated for different temperatures. It is found that capacitance frequency
C
–
f
characteristic possesses a low-frequency dispersion that arises for high temperature (
T
> 300 °C). Accordingly, the loss factor exhibits a dielectric relaxation (with an activation energy
E
a
~ 1.13 eV) which is intrinsically related to the diffusion of oxygen vacancies. The relaxation mechanisms of electrical defects in a dynamic regime (TSCs) analysis show that defect related to the TSC peak observed at 148.5 °C (
E
a
~ 1 eV) is in agreement with impedance spectroscopy (
C
–
f
). On the other hand, when the MIM structures are analyzed in static mode, the
I
–
V
plots are governed by Schottky emission. The extrapolation of the curve at zero field gives a barrier height of 1.7 eV.</abstract><cop>Berlin/Heidelberg</cop><pub>Springer Berlin Heidelberg</pub><doi>10.1007/s00339-014-8292-8</doi><tpages>7</tpages></addata></record> |
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| issn | 0947-8396 1432-0630 |
| language | eng |
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| source | Springer Nature - Complete Springer Journals |
| subjects | Characterization and Evaluation of Materials Condensed Matter Physics Machines Manufacturing Nanotechnology Optical and Electronic Materials Physics Physics and Astronomy Processes Surfaces and Interfaces Thin Films |
| title | Investigation of electrical properties of HfO2 metal–insulator–metal (MIM) devices |
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