Local Schottky contacts of embedded Ag nanoparticles in Al 2 O 3 /SiN x :H stacks on Si: a design to enhance field effect passivation of Si junctions
This paper describes an original design leading to the field effect passivation of Si n -p junctions. Ordered Ag nanoparticle (Ag-NP) arrays with optimal size and coverage fabricated by means of nanosphere lithography and thermal evaporation, were embedded in ultrathin-Al O /SiN :H stacks on the top...
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| Veröffentlicht in: | Nanotechnology 2018-07, Vol.29 (28), p.285403 |
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| container_title | Nanotechnology |
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| creator | Elmi, O Ibrahim Cristini-Robbe, O Chen, M Y Wei, B Bernard, R Yarekha, D Okada, E Ouendi, S Portier, X Gourbilleau, F Xu, T Stiévenard, D |
| description | This paper describes an original design leading to the field effect passivation of Si n
-p junctions. Ordered Ag nanoparticle (Ag-NP) arrays with optimal size and coverage fabricated by means of nanosphere lithography and thermal evaporation, were embedded in ultrathin-Al
O
/SiN
:H stacks on the top of implanted Si n
-p junctions, to achieve effective surface passivation. One way to characterize surface passivation is to use photocurrent, sensitive to recombination centers. We evidenced an improvement of photocurrent by a factor of 5 with the presence of Ag NPs. Finite-difference time-domain (FDTD) simulations combining with semi-quantitative calculations demonstrated that such gain was mainly due to the enhanced field effect passivation through the depleted region associated with the Ag-NPs/Si Schottky contacts. |
| doi_str_mv | 10.1088/1361-6528/aac032 |
| format | Article |
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-p junctions. Ordered Ag nanoparticle (Ag-NP) arrays with optimal size and coverage fabricated by means of nanosphere lithography and thermal evaporation, were embedded in ultrathin-Al
O
/SiN
:H stacks on the top of implanted Si n
-p junctions, to achieve effective surface passivation. One way to characterize surface passivation is to use photocurrent, sensitive to recombination centers. We evidenced an improvement of photocurrent by a factor of 5 with the presence of Ag NPs. Finite-difference time-domain (FDTD) simulations combining with semi-quantitative calculations demonstrated that such gain was mainly due to the enhanced field effect passivation through the depleted region associated with the Ag-NPs/Si Schottky contacts.</description><identifier>ISSN: 0957-4484</identifier><identifier>EISSN: 1361-6528</identifier><identifier>DOI: 10.1088/1361-6528/aac032</identifier><identifier>PMID: 29697055</identifier><language>eng</language><publisher>England: Institute of Physics</publisher><subject>Chemical Sciences ; Computational Physics ; Condensed Matter ; Electromagnetism ; Engineering Sciences ; Material chemistry ; Materials ; Materials Science ; Micro and nanotechnologies ; Microelectronics ; Optics ; Photonic ; Physics</subject><ispartof>Nanotechnology, 2018-07, Vol.29 (28), p.285403</ispartof><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c1455-996f1aad283ef43045ca3093838b8b2efdcce628649510025c5904432398a903</citedby><cites>FETCH-LOGICAL-c1455-996f1aad283ef43045ca3093838b8b2efdcce628649510025c5904432398a903</cites><orcidid>0000-0003-1410-9261 ; 0000-0002-2386-7649 ; 0000-0003-3749-9178</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27901,27902</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/29697055$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink><backlink>$$Uhttps://hal.science/hal-01794379$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Elmi, O Ibrahim</creatorcontrib><creatorcontrib>Cristini-Robbe, O</creatorcontrib><creatorcontrib>Chen, M Y</creatorcontrib><creatorcontrib>Wei, B</creatorcontrib><creatorcontrib>Bernard, R</creatorcontrib><creatorcontrib>Yarekha, D</creatorcontrib><creatorcontrib>Okada, E</creatorcontrib><creatorcontrib>Ouendi, S</creatorcontrib><creatorcontrib>Portier, X</creatorcontrib><creatorcontrib>Gourbilleau, F</creatorcontrib><creatorcontrib>Xu, T</creatorcontrib><creatorcontrib>Stiévenard, D</creatorcontrib><title>Local Schottky contacts of embedded Ag nanoparticles in Al 2 O 3 /SiN x :H stacks on Si: a design to enhance field effect passivation of Si junctions</title><title>Nanotechnology</title><addtitle>Nanotechnology</addtitle><description>This paper describes an original design leading to the field effect passivation of Si n
-p junctions. Ordered Ag nanoparticle (Ag-NP) arrays with optimal size and coverage fabricated by means of nanosphere lithography and thermal evaporation, were embedded in ultrathin-Al
O
/SiN
:H stacks on the top of implanted Si n
-p junctions, to achieve effective surface passivation. One way to characterize surface passivation is to use photocurrent, sensitive to recombination centers. We evidenced an improvement of photocurrent by a factor of 5 with the presence of Ag NPs. Finite-difference time-domain (FDTD) simulations combining with semi-quantitative calculations demonstrated that such gain was mainly due to the enhanced field effect passivation through the depleted region associated with the Ag-NPs/Si Schottky contacts.</description><subject>Chemical Sciences</subject><subject>Computational Physics</subject><subject>Condensed Matter</subject><subject>Electromagnetism</subject><subject>Engineering Sciences</subject><subject>Material chemistry</subject><subject>Materials</subject><subject>Materials Science</subject><subject>Micro and nanotechnologies</subject><subject>Microelectronics</subject><subject>Optics</subject><subject>Photonic</subject><subject>Physics</subject><issn>0957-4484</issn><issn>1361-6528</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNo9kUtPwzAQhC0EouVx54T2yiHUz9TurUJAkSo4lHu0dWzqNnWqOCD6Q_i_JCr0tNrRfLvSDCE3jN4zqvWIiZxlueJ6hGip4CdkeJROyZAaNc6k1HJALlJaU8qY5uycDLjJzZgqNSQ_89piBQu7qtt2swdbxxZtm6D24LZLV5auhOkHRIz1Dps22MolCBGmFXB4AwGjRXiFb5jMIHXkpiMjLMIEEEqXwkeEtgYXVxitAx9cVYLz3tkWdphS-MI2dED3bRFg_Rltv6YrcuaxSu76b16S96fH94dZNn97fnmYzjPLpFKZMblniCXXwnkpqFQWBTVCC73US-58aa3Luc6lUYxSrqwyVErBhdFoqLgkd4ezK6yKXRO22OyLGkMxm86LXqNsbKQYmy_WeenBa5s6pcb5I8Bo0ZdR9MkXffLFoYwOuT0gu8_l1pVH4D998QuPSYML</recordid><startdate>20180713</startdate><enddate>20180713</enddate><creator>Elmi, O Ibrahim</creator><creator>Cristini-Robbe, O</creator><creator>Chen, M Y</creator><creator>Wei, B</creator><creator>Bernard, R</creator><creator>Yarekha, D</creator><creator>Okada, E</creator><creator>Ouendi, S</creator><creator>Portier, X</creator><creator>Gourbilleau, F</creator><creator>Xu, T</creator><creator>Stiévenard, D</creator><general>Institute of Physics</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>1XC</scope><scope>VOOES</scope><orcidid>https://orcid.org/0000-0003-1410-9261</orcidid><orcidid>https://orcid.org/0000-0002-2386-7649</orcidid><orcidid>https://orcid.org/0000-0003-3749-9178</orcidid></search><sort><creationdate>20180713</creationdate><title>Local Schottky contacts of embedded Ag nanoparticles in Al 2 O 3 /SiN x :H stacks on Si: a design to enhance field effect passivation of Si junctions</title><author>Elmi, O Ibrahim ; Cristini-Robbe, O ; Chen, M Y ; Wei, B ; Bernard, R ; Yarekha, D ; Okada, E ; Ouendi, S ; Portier, X ; Gourbilleau, F ; Xu, T ; Stiévenard, D</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1455-996f1aad283ef43045ca3093838b8b2efdcce628649510025c5904432398a903</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Chemical Sciences</topic><topic>Computational Physics</topic><topic>Condensed Matter</topic><topic>Electromagnetism</topic><topic>Engineering Sciences</topic><topic>Material chemistry</topic><topic>Materials</topic><topic>Materials Science</topic><topic>Micro and nanotechnologies</topic><topic>Microelectronics</topic><topic>Optics</topic><topic>Photonic</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Elmi, O Ibrahim</creatorcontrib><creatorcontrib>Cristini-Robbe, O</creatorcontrib><creatorcontrib>Chen, M Y</creatorcontrib><creatorcontrib>Wei, B</creatorcontrib><creatorcontrib>Bernard, R</creatorcontrib><creatorcontrib>Yarekha, D</creatorcontrib><creatorcontrib>Okada, E</creatorcontrib><creatorcontrib>Ouendi, S</creatorcontrib><creatorcontrib>Portier, X</creatorcontrib><creatorcontrib>Gourbilleau, F</creatorcontrib><creatorcontrib>Xu, T</creatorcontrib><creatorcontrib>Stiévenard, D</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>Hyper Article en Ligne (HAL)</collection><collection>Hyper Article en Ligne (HAL) (Open Access)</collection><jtitle>Nanotechnology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Elmi, O Ibrahim</au><au>Cristini-Robbe, O</au><au>Chen, M Y</au><au>Wei, B</au><au>Bernard, R</au><au>Yarekha, D</au><au>Okada, E</au><au>Ouendi, S</au><au>Portier, X</au><au>Gourbilleau, F</au><au>Xu, T</au><au>Stiévenard, D</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Local Schottky contacts of embedded Ag nanoparticles in Al 2 O 3 /SiN x :H stacks on Si: a design to enhance field effect passivation of Si junctions</atitle><jtitle>Nanotechnology</jtitle><addtitle>Nanotechnology</addtitle><date>2018-07-13</date><risdate>2018</risdate><volume>29</volume><issue>28</issue><spage>285403</spage><pages>285403-</pages><issn>0957-4484</issn><eissn>1361-6528</eissn><abstract>This paper describes an original design leading to the field effect passivation of Si n
-p junctions. Ordered Ag nanoparticle (Ag-NP) arrays with optimal size and coverage fabricated by means of nanosphere lithography and thermal evaporation, were embedded in ultrathin-Al
O
/SiN
:H stacks on the top of implanted Si n
-p junctions, to achieve effective surface passivation. One way to characterize surface passivation is to use photocurrent, sensitive to recombination centers. We evidenced an improvement of photocurrent by a factor of 5 with the presence of Ag NPs. Finite-difference time-domain (FDTD) simulations combining with semi-quantitative calculations demonstrated that such gain was mainly due to the enhanced field effect passivation through the depleted region associated with the Ag-NPs/Si Schottky contacts.</abstract><cop>England</cop><pub>Institute of Physics</pub><pmid>29697055</pmid><doi>10.1088/1361-6528/aac032</doi><orcidid>https://orcid.org/0000-0003-1410-9261</orcidid><orcidid>https://orcid.org/0000-0002-2386-7649</orcidid><orcidid>https://orcid.org/0000-0003-3749-9178</orcidid><oa>free_for_read</oa></addata></record> |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Chemical Sciences Computational Physics Condensed Matter Electromagnetism Engineering Sciences Material chemistry Materials Materials Science Micro and nanotechnologies Microelectronics Optics Photonic Physics |
| title | Local Schottky contacts of embedded Ag nanoparticles in Al 2 O 3 /SiN x :H stacks on Si: a design to enhance field effect passivation of Si junctions |
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