Optical and structural proprieties of nc-Si:H prepared by argon diluted silane PECVD

Using argon as a diluent of Silane, hydrogenated amorphous and nanorocrystalline silicon films Si:H were prepared by radio-frequency (13.56MHz) plasma enhanced chemical vapor deposition (rf-PECVD). The deposition rate and crystallinity varying with the deposition pressure and rf power, were systemat...

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Veröffentlicht in:	Journal of non-crystalline solids 2012-09, Vol.358 (17), p.1978-1982
Hauptverfasser:	Amrani, Rachid, Pichot, Frederic, Podlecki, Jean, Foucaran, Alain, Chahed, Larbi, Cuminal, Yvan
Format:	Artikel
Sprache:	eng
Schlagworte:	Argon dilution Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Deposition by sputtering Electronics Engineering Sciences Exact sciences and technology Hydrogenated silicon Materials science Methods of deposition of films and coatings film growth and epitaxy Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Optical proprieties PECVD Physics Structural evolution
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