Optical and structural proprieties of nc-Si:H prepared by argon diluted silane PECVD

Using argon as a diluent of Silane, hydrogenated amorphous and nanorocrystalline silicon films Si:H were prepared by radio-frequency (13.56MHz) plasma enhanced chemical vapor deposition (rf-PECVD). The deposition rate and crystallinity varying with the deposition pressure and rf power, were systematically studied. Structural analysis (Raman scattering spectroscopy and X-ray diffraction), combined with optical measurements spectroscopy were used to characterize the films. The argon dilution of silane for all samples studied was 95% by volume, and the substrate temperature was 200°C. The deposition pressure was varied from 400mTorr to 1400mTorr and varying rf power from 50 to 250W. The structural evolution studies, shows that beyond 200W of rf power, an amorphous-nanocrystalline transition was observed, with an increase in crystalline fraction by increasing rf power and working pressure. The films were grown at high deposition rates. The deposition rates of the films near the amorphous-nanocrystalline phase transition region were found in the range 6–10Å/s. A correlation between structural and optical properties has been found and discussed. ► Ar diluted Si:H PECVD thin films were studied. ► The films were grown at high deposition rates. ► Change the deposition parameters to obtain films from amorphous to nanocrystalline. ► Films with different crystalline fractions and crystallite size are achieved. ► Optical and structural properties can be tuned by adjusting the deposition conditions.