High quality epitaxial fluorine-doped SnO2 films by ultrasonic spray pyrolysis: Structural and physical property investigation
Despite its wide use in the display and photovoltaic industries, fluorine-doped tin oxide (F:SnO2, FTO) has been studied only in its polycrystalline form. In this work, we report on the first growth of epitaxial FTO thin film by ultrasonic spray pyrolysis – a simple chemical deposition method – and...
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creator | Zhang, Shan-Ting Rouvière, Jean-Luc Consonni, Vincent Roussel, Hervé Rapenne, Laetitia Pernot, Etienne Muñoz-Rojas, David Klein, Andreas Bellet, Daniel |
description | Despite its wide use in the display and photovoltaic industries, fluorine-doped tin oxide (F:SnO2, FTO) has been studied only in its polycrystalline form. In this work, we report on the first growth of epitaxial FTO thin film by ultrasonic spray pyrolysis – a simple chemical deposition method – and we reveal the structure-property interplay by investigating in details its growth, morphology and strain/defects. Epitaxial FTO films are successfully grown on (110) rutile TiO2 single crystals and form mosaic domains with an out-of-plane distribution smaller than 0.5°, showing high structural quality comparable to epitaxial films prepared by molecular beam epitaxy and pulsed-laser deposition. Owing to the large lattice mismatch with rutile TiO2, the FTO film develops significant structural defects to release the epitaxial strain and is consequently nearly fully relaxed with a slight residual strain of 0.1–0.2%. With the help of an innovative nano-beam precession electron diffraction technique, the strain distribution is mapped at the TiO2/FTO interface, from which we identify the interfacial and secondary strain relaxation taking place mainly in the first 22nm in the FTO film. The Hall-mobility of the epitaxial FTO films is close to the state-of-the-art and expected to improve further at lower doping concentrations.
[Display omitted]
•Epitaxial F-doped SnO2 (FTO) films are deposited on (110) rutile TiO2 for the first time using ultrasonic spray pyrolysis.•Epitaxial FTO film is of high structural quality with mosaic domains showing a narrow distribution of less than 0.5°.•Strain map at TiO2/FTO interface reveals the first 22 nm in FTO responsible for interfacial and secondary strain relaxation. |
doi_str_mv | 10.1016/j.matdes.2017.07.037 |
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[Display omitted]
•Epitaxial F-doped SnO2 (FTO) films are deposited on (110) rutile TiO2 for the first time using ultrasonic spray pyrolysis.•Epitaxial FTO film is of high structural quality with mosaic domains showing a narrow distribution of less than 0.5°.•Strain map at TiO2/FTO interface reveals the first 22 nm in FTO responsible for interfacial and secondary strain relaxation.</description><identifier>ISSN: 0264-1275</identifier><identifier>ISSN: 0261-3069</identifier><identifier>EISSN: 1873-4197</identifier><identifier>EISSN: 0264-1275</identifier><identifier>DOI: 10.1016/j.matdes.2017.07.037</identifier><language>eng</language><publisher>Elsevier Ltd</publisher><subject>Chemical Sciences ; Dislocations ; Epitaxy growth ; FTO ; Local strain distribution ; Material chemistry ; Mobility</subject><ispartof>Materials & Design, 2017-10, Vol.132, p.518-525</ispartof><rights>2017 Elsevier Ltd</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c406t-d28b2b0e25b79c80267ce4c88c1456f44cbc925da62df60ac314c5119ccbd0a93</citedby><cites>FETCH-LOGICAL-c406t-d28b2b0e25b79c80267ce4c88c1456f44cbc925da62df60ac314c5119ccbd0a93</cites><orcidid>0000-0003-0171-8746 ; 0000-0002-9929-3696 ; 0000-0003-1896-2315 ; 0000-0002-9691-5867 ; 0000-0001-8731-3074 ; 0000-0003-1234-0814 ; 0000-0001-6110-5760</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27924,27925</link.rule.ids><backlink>$$Uhttps://hal.science/hal-01758851$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Zhang, Shan-Ting</creatorcontrib><creatorcontrib>Rouvière, Jean-Luc</creatorcontrib><creatorcontrib>Consonni, Vincent</creatorcontrib><creatorcontrib>Roussel, Hervé</creatorcontrib><creatorcontrib>Rapenne, Laetitia</creatorcontrib><creatorcontrib>Pernot, Etienne</creatorcontrib><creatorcontrib>Muñoz-Rojas, David</creatorcontrib><creatorcontrib>Klein, Andreas</creatorcontrib><creatorcontrib>Bellet, Daniel</creatorcontrib><title>High quality epitaxial fluorine-doped SnO2 films by ultrasonic spray pyrolysis: Structural and physical property investigation</title><title>Materials & Design</title><description>Despite its wide use in the display and photovoltaic industries, fluorine-doped tin oxide (F:SnO2, FTO) has been studied only in its polycrystalline form. In this work, we report on the first growth of epitaxial FTO thin film by ultrasonic spray pyrolysis – a simple chemical deposition method – and we reveal the structure-property interplay by investigating in details its growth, morphology and strain/defects. Epitaxial FTO films are successfully grown on (110) rutile TiO2 single crystals and form mosaic domains with an out-of-plane distribution smaller than 0.5°, showing high structural quality comparable to epitaxial films prepared by molecular beam epitaxy and pulsed-laser deposition. Owing to the large lattice mismatch with rutile TiO2, the FTO film develops significant structural defects to release the epitaxial strain and is consequently nearly fully relaxed with a slight residual strain of 0.1–0.2%. With the help of an innovative nano-beam precession electron diffraction technique, the strain distribution is mapped at the TiO2/FTO interface, from which we identify the interfacial and secondary strain relaxation taking place mainly in the first 22nm in the FTO film. The Hall-mobility of the epitaxial FTO films is close to the state-of-the-art and expected to improve further at lower doping concentrations.
[Display omitted]
•Epitaxial F-doped SnO2 (FTO) films are deposited on (110) rutile TiO2 for the first time using ultrasonic spray pyrolysis.•Epitaxial FTO film is of high structural quality with mosaic domains showing a narrow distribution of less than 0.5°.•Strain map at TiO2/FTO interface reveals the first 22 nm in FTO responsible for interfacial and secondary strain relaxation.</description><subject>Chemical Sciences</subject><subject>Dislocations</subject><subject>Epitaxy growth</subject><subject>FTO</subject><subject>Local strain distribution</subject><subject>Material chemistry</subject><subject>Mobility</subject><issn>0264-1275</issn><issn>0261-3069</issn><issn>1873-4197</issn><issn>0264-1275</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNp9UMGK2zAUFKULTdP9gz3o2oOzkixbdg-FsHQ3C4E9pHsW8pOcvODYriSH-rLfvgopPS48eLxhZh4zhNxxtuKMl_fH1clE68JKMK5WLE2uPpEFr1SeSV6rz2TBRCkzLlTxhXwN4ciYECqXC_K2wf2B_plMh3GmbsRo_qLpaNtNg8feZXYYnaW7_kXQFrtToM1Mpy56E4YegYbRm5mOsx-6OWD4QXfRTxAnnzxMb-l4SDCkY_TJyKcf2J9diLg3EYf-G7lpTRfc7b-9JK-Pv34_bLLty9Pzw3qbgWRlzKyoGtEwJ4pG1VClMAqchKoCLouylRIaqEVhTSlsWzIDOZdQcF4DNJaZOl-S71ffg-n06PFk_KwHg3qz3uoLloorqqrgZ5648soFP4TgXftfwJm-9K2P-tq3vvStWZpcJdnPq8ylHGd0XgdA14Oz6B1EbQf82OAdU-SOhg</recordid><startdate>20171015</startdate><enddate>20171015</enddate><creator>Zhang, Shan-Ting</creator><creator>Rouvière, Jean-Luc</creator><creator>Consonni, Vincent</creator><creator>Roussel, Hervé</creator><creator>Rapenne, Laetitia</creator><creator>Pernot, Etienne</creator><creator>Muñoz-Rojas, David</creator><creator>Klein, Andreas</creator><creator>Bellet, Daniel</creator><general>Elsevier Ltd</general><general>Elsevier</general><scope>AAYXX</scope><scope>CITATION</scope><scope>1XC</scope><orcidid>https://orcid.org/0000-0003-0171-8746</orcidid><orcidid>https://orcid.org/0000-0002-9929-3696</orcidid><orcidid>https://orcid.org/0000-0003-1896-2315</orcidid><orcidid>https://orcid.org/0000-0002-9691-5867</orcidid><orcidid>https://orcid.org/0000-0001-8731-3074</orcidid><orcidid>https://orcid.org/0000-0003-1234-0814</orcidid><orcidid>https://orcid.org/0000-0001-6110-5760</orcidid></search><sort><creationdate>20171015</creationdate><title>High quality epitaxial fluorine-doped SnO2 films by ultrasonic spray pyrolysis: Structural and physical property investigation</title><author>Zhang, Shan-Ting ; Rouvière, Jean-Luc ; Consonni, Vincent ; Roussel, Hervé ; Rapenne, Laetitia ; Pernot, Etienne ; Muñoz-Rojas, David ; Klein, Andreas ; Bellet, Daniel</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c406t-d28b2b0e25b79c80267ce4c88c1456f44cbc925da62df60ac314c5119ccbd0a93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Chemical Sciences</topic><topic>Dislocations</topic><topic>Epitaxy growth</topic><topic>FTO</topic><topic>Local strain distribution</topic><topic>Material chemistry</topic><topic>Mobility</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhang, Shan-Ting</creatorcontrib><creatorcontrib>Rouvière, Jean-Luc</creatorcontrib><creatorcontrib>Consonni, Vincent</creatorcontrib><creatorcontrib>Roussel, Hervé</creatorcontrib><creatorcontrib>Rapenne, Laetitia</creatorcontrib><creatorcontrib>Pernot, Etienne</creatorcontrib><creatorcontrib>Muñoz-Rojas, David</creatorcontrib><creatorcontrib>Klein, Andreas</creatorcontrib><creatorcontrib>Bellet, Daniel</creatorcontrib><collection>CrossRef</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Materials & Design</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhang, Shan-Ting</au><au>Rouvière, Jean-Luc</au><au>Consonni, Vincent</au><au>Roussel, Hervé</au><au>Rapenne, Laetitia</au><au>Pernot, Etienne</au><au>Muñoz-Rojas, David</au><au>Klein, Andreas</au><au>Bellet, Daniel</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High quality epitaxial fluorine-doped SnO2 films by ultrasonic spray pyrolysis: Structural and physical property investigation</atitle><jtitle>Materials & Design</jtitle><date>2017-10-15</date><risdate>2017</risdate><volume>132</volume><spage>518</spage><epage>525</epage><pages>518-525</pages><issn>0264-1275</issn><issn>0261-3069</issn><eissn>1873-4197</eissn><eissn>0264-1275</eissn><abstract>Despite its wide use in the display and photovoltaic industries, fluorine-doped tin oxide (F:SnO2, FTO) has been studied only in its polycrystalline form. In this work, we report on the first growth of epitaxial FTO thin film by ultrasonic spray pyrolysis – a simple chemical deposition method – and we reveal the structure-property interplay by investigating in details its growth, morphology and strain/defects. Epitaxial FTO films are successfully grown on (110) rutile TiO2 single crystals and form mosaic domains with an out-of-plane distribution smaller than 0.5°, showing high structural quality comparable to epitaxial films prepared by molecular beam epitaxy and pulsed-laser deposition. Owing to the large lattice mismatch with rutile TiO2, the FTO film develops significant structural defects to release the epitaxial strain and is consequently nearly fully relaxed with a slight residual strain of 0.1–0.2%. With the help of an innovative nano-beam precession electron diffraction technique, the strain distribution is mapped at the TiO2/FTO interface, from which we identify the interfacial and secondary strain relaxation taking place mainly in the first 22nm in the FTO film. The Hall-mobility of the epitaxial FTO films is close to the state-of-the-art and expected to improve further at lower doping concentrations.
[Display omitted]
•Epitaxial F-doped SnO2 (FTO) films are deposited on (110) rutile TiO2 for the first time using ultrasonic spray pyrolysis.•Epitaxial FTO film is of high structural quality with mosaic domains showing a narrow distribution of less than 0.5°.•Strain map at TiO2/FTO interface reveals the first 22 nm in FTO responsible for interfacial and secondary strain relaxation.</abstract><pub>Elsevier Ltd</pub><doi>10.1016/j.matdes.2017.07.037</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0003-0171-8746</orcidid><orcidid>https://orcid.org/0000-0002-9929-3696</orcidid><orcidid>https://orcid.org/0000-0003-1896-2315</orcidid><orcidid>https://orcid.org/0000-0002-9691-5867</orcidid><orcidid>https://orcid.org/0000-0001-8731-3074</orcidid><orcidid>https://orcid.org/0000-0003-1234-0814</orcidid><orcidid>https://orcid.org/0000-0001-6110-5760</orcidid></addata></record> |
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subjects | Chemical Sciences Dislocations Epitaxy growth FTO Local strain distribution Material chemistry Mobility |
title | High quality epitaxial fluorine-doped SnO2 films by ultrasonic spray pyrolysis: Structural and physical property investigation |
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