ZrO2 Thin Films Grown On 2D and 3D Silicon Surfaces By DLI-MOCVD For Electronic Devices

Zirconia films are already used as thermal barrier, sensors and fuel cells and have great potential for electronic applications in particular as a dielectric in high density filter capacitors in future micro DC-DC converters. In this context, the SiO2/Si3N4 standard dielectric was replaced by ZrO2 (ε = 25-40) in 2D and 3D MIS (Metal-Isolator-Semiconductor) structures. Zirconia thin layers (100nm) were deposited between 550{degree sign}C and 700{degree sign}C on Si(100) planar substrates and inside pores etched in Si(100) by direct liquid injection MOCVD from Zr2(OiPr)6(thd)2 precursor and annealed at 900{degree sign}C to check phase stability. As-deposited films exhibit a cubic/tetragonal structure that was identified by DRX and FT-IR. The electric properties on specific samples were measured and discussed. After annealing, phase transformation occurs in the film, from cubic/tetragonal structure to a tetragonal/monoclinic one, depending on the deposition parameters.