Direct mapping of strain in a strained silicon transistor by high-resolution electron microscopy

Aberration-corrected high-resolution transmission electron microscopy (HRTEM) is used to measure strain in a strained-silicon metal-oxide-semiconductor field-effect transistor. Strain components parallel and perpendicular to the gate are determined directly from the HRTEM image by geometric phase an...

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Veröffentlicht in:	Physical review letters 2008-04, Vol.100 (15), p.156602-156602, Article 156602
Hauptverfasser:	Hüe, Florian, Hÿtch, Martin, Bender, Hugo, Houdellier, Florent, Claverie, Alain
Format:	Artikel
Sprache:	eng
Schlagworte:	Accelerator Physics Electromagnetism Engineering Sciences High Energy Physics - Experiment Materials Optics Photonic Physics Quantum Physics Signal and Image processing
Online-Zugang:	Volltext
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