Nanoscale concentration and strain distribution in pseudomorphic films Si1−xGex/Si processed by pulsed laser induced epitaxy

► Si1−xGex/Si pseudomorphic layers were synthesized by pulsed laser induced epitaxy. ► We performed strain and concentration measurements at the nanometer scale. ► Ge profiles are graded from the interface to the surface due segregation effects. ► The Ge profile is largely influenced by the temporal...

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Veröffentlicht in:	Applied surface science 2012-09, Vol.258 (23), p.9208-9212
Hauptverfasser:	Vincent, L., Fossard, F., Kociniewski, T., Largeau, L., Cherkashin, N., Hÿtch, M.J., Debarre, D., Sauvage, T., Claverie, A., Boulmer, J., Bouchier, D.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Laser deposition Materials science Mechanical and acoustical properties Melting Methods of deposition of films and coatings film growth and epitaxy Physical properties of thin films, nonelectronic Physics Segregation Solidification Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties)
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