New triggering-speed-characterization method for diode-triggered SCR using TLP

The key parameters in the optimization of the Diode Triggered Silicon-Controlled Rectifier (DTSCR) as a RF ESD protection, are the turn-on time and the trigger-voltage overshoots seen before the SCR turns on, during very fast ESD transients [1]. But at this time, there is no normalized method to evaluate and report the ESD device turn-on speed [2]. Such a method would be required to effectively compare device performance. In this work a new method, based on stored-charge, is investigated to characterize the triggering speed of DTSCR using Transmission Line Pulsing (TLP) measurements. •The turn-on speed of different DUT could be compared by extracting their minimum stored charge using TLP current waveforms.•The critical charge is independent of the stress source impedance, whereas the turn-on time depends on how the DUT is biased.•The stored charge is a specific parameter of each thyristor structure, and depends on design and process parameters.•The lowest is the minimum stored charge, the faster is the DUT triggering.