Revealing topological Dirac fermions at the surface of strained HgTe thin films via quantum Hall transport spectroscopy
We demonstrate evidences of electronic transport via topological Dirac surface states in a thin film of strained HgTe. At high perpendicular magnetic fields, we show that the electron transport reaches the quantum Hall regime with vanishing resistance. Furthermore, quantum Hall transport spectroscop...
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| Veröffentlicht in: | Physical review. B 2017-12, Vol.96 (24), Article 245420 |
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| container_title | Physical review. B |
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| creator | Thomas, C. Crauste, O. Haas, B. Jouneau, P.-H. Bäuerle, C. Lévy, L. P. Orignac, E. Carpentier, D. Ballet, P. Meunier, T. |
| description | We demonstrate evidences of electronic transport via topological Dirac surface states in a thin film of strained HgTe. At high perpendicular magnetic fields, we show that the electron transport reaches the quantum Hall regime with vanishing resistance. Furthermore, quantum Hall transport spectroscopy reveals energy splittings of relativistic Landau levels specific to coupled Dirac surface states. This study provides insights in the quantum Hall effect of topological insulator (TI) slabs, in the crossover regime between two- and three-dimensional TIs, and in the relevance of thin TI films to explore circuit functionalities in spintronics and quantum nanoelectronics. |
| doi_str_mv | 10.1103/PhysRevB.96.245420 |
| format | Article |
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| source | American Physical Society Journals |
| subjects | Condensed Matter Crossovers Electron transport Fermions Mesoscopic Systems and Quantum Hall Effect Nanoelectronics Physics Quantum Hall effect Quantum theory Spectroscopy Spectrum analysis Spintronics Thin films |
| title | Revealing topological Dirac fermions at the surface of strained HgTe thin films via quantum Hall transport spectroscopy |
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