Influence of PE‐ALD of GaP on the Silicon Wafers Quality

An attractive method of low‐temperature plasma‐enhanced atomic layer deposition (PE‐ALD) of GaP on silicon wafer was recently proposed. In the present paper, the influence of the growth process on the quality of silicon wafers is explored by space charge capacitance techniques, C–V profiling and dee...

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Veröffentlicht in:Physica status solidi. A, Applications and materials science Applications and materials science, 2017-12, Vol.214 (12), p.n/a
Hauptverfasser: Baranov, Artem I., Gudovskikh, Alexander S., Kudryashov, Dmitriy A., Morozov, Ivan A., Mozharov, Alexey M., Nikitina, Ekaterina V., Zelentsov, Kirill S., Darga, Arouna, Le Gall, Sylvain, Kleider, Jean‐Paul
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Sprache:eng
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