Controlling n-Type Carrier Density from Er Doping of InGaAs with MBE Growth Temperature

Under certain growth conditions in molecular beam epitaxy, erbium, indium, gallium, and arsenic form a two-phase composite, consisting of ErAs nanoparticles embedded in dilute Er-doped In 0.53 Ga 0.47 As. This paper further explores the effect of growth conditions, specifically growth temperature, o...

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Veröffentlicht in:	Journal of Electronic Materials 2012-05, Vol.41 (5), p.948-953
Hauptverfasser:	Burke, Peter G., Buehl, Trevor E., Gilles, Pernot, Lu, Hong, Shakouri, Ali, Palmstrom, Chris J., Bowers, John E., Gossard, Arthur C.
Format:	Artikel
Sprache:	eng
Schlagworte:	Characterization and Evaluation of Materials Chemical synthesis methods Chemistry and Materials Science Condensed Matter Cross-disciplinary physics: materials science rheology Electric properties Electronics and Microelectronics Exact sciences and technology Instrumentation Materials Science Methods of deposition of films and coatings film growth and epitaxy Methods of nanofabrication Molecular beam epitaxy Molecular, atomic, ion, and chemical beam epitaxy Nanoparticles Nanostructured materials Optical and Electronic Materials Physics Semiconductor doping solar (photovoltaic), solid state lighting, phonons, thermoelectric, bio-inspired, energy storage (including batteries and capacitors), electrodes - solar, defects, charge transport, materials and chemistry by design, optics, synthesis (novel materials), synthesis (self-assembly), synthesis (scalable processing) Solid State Physics Theory and models of film growth
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