The influence of sequence of precursor films on CZTSe thin films prepared by ion-beam sputtering deposition

The influence of sequence of precursor films on CZTSe thin films prepared by ion-beam sputtering deposition

The CuZnSn（CZT） precursor thin films are grown by ion-beam sputtering Cu, Zn, Sn targets with different orders and then sputtering Se target to fabricate Cu_2ZnSnSe_4（CZTSe） absorber thin films on molybdenum substrates. They are annealed in the same vacuum chamber at 400 ℃. The characterization meth...

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Veröffentlicht in:Journal of semiconductors 2017-02, Vol.38 (2), p.15-19
Hauptverfasser: Zhao, Jun, Liang, Guangxing, Zeng, Yang, Fan, Ping, Hu, Juguang, Luo, Jingting, Zhang, Dongping
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Chemical Sciences
X射线光电子能谱
制备
前体
吸收薄膜
序列
扫描电子显微镜
离子束溅射沉积
表面形貌
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container_end_page 19
container_issue 2
container_start_page 15
container_title Journal of semiconductors
container_volume 38
creator Zhao, Jun
Liang, Guangxing
Zeng, Yang
Fan, Ping
Hu, Juguang
Luo, Jingting
Zhang, Dongping
description The CuZnSn（CZT） precursor thin films are grown by ion-beam sputtering Cu, Zn, Sn targets with different orders and then sputtering Se target to fabricate Cu_2ZnSnSe_4（CZTSe） absorber thin films on molybdenum substrates. They are annealed in the same vacuum chamber at 400 ℃. The characterization methods of CZTSe thin films include X-ray diffraction（XRD）, energy dispersive spectroscopy（EDS）, scanning electron microscopy（SEM）, and X-ray photoelectron spectra（XPS） in order to study the crystallographic properties, composition, surface morphology, electrical properties and so on. The results display that the CZTSe thin films got the strongest diffraction peak intensity and were with good crystalline quality and its morphology appeared smooth and compact with a sequence of Cu/Zn/Sn/Se, which reveals that the expected states for CZTSe are Cu~（1＋）, Zn~（2＋）, Sn~（4＋）, Se~（2）.With the good crystalline quality and close to ideal stoichiometric ratio the resistivity of the CZTSe film with the sequence of Cu/Zn/Sn/Se is lower, whose optical band gap is about 1.50 eV.
doi_str_mv 10.1088/1674-4926/38/2/023002
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They are annealed in the same vacuum chamber at 400 ℃. The characterization methods of CZTSe thin films include X-ray diffraction（XRD）, energy dispersive spectroscopy（EDS）, scanning electron microscopy（SEM）, and X-ray photoelectron spectra（XPS） in order to study the crystallographic properties, composition, surface morphology, electrical properties and so on. 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They are annealed in the same vacuum chamber at 400 ℃. The characterization methods of CZTSe thin films include X-ray diffraction（XRD）, energy dispersive spectroscopy（EDS）, scanning electron microscopy（SEM）, and X-ray photoelectron spectra（XPS） in order to study the crystallographic properties, composition, surface morphology, electrical properties and so on. 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They are annealed in the same vacuum chamber at 400 ℃. The characterization methods of CZTSe thin films include X-ray diffraction（XRD）, energy dispersive spectroscopy（EDS）, scanning electron microscopy（SEM）, and X-ray photoelectron spectra（XPS） in order to study the crystallographic properties, composition, surface morphology, electrical properties and so on. 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X射线光电子能谱
制备
前体
吸收薄膜
序列
扫描电子显微镜
离子束溅射沉积
表面形貌
title The influence of sequence of precursor films on CZTSe thin films prepared by ion-beam sputtering deposition
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