How to quantify and predict long term multiple stress operation: Application to Normally-Off Power GaN transistor technologies

The present paper is implementing a numerical application of the Boltzmann–Arrhenius–Zhurkov (BAZ) model and relates to the statistic reliability model derived from the Transition State Theory paradigm. It shows how the quantified tool can be applied to determine the associated effective activation energy. The unified multiple stress reliability model for electronic devices is applied to Normally-Off Power GaN transistor technologies to quantify and predict the reliability figures of this electronic type of product when operating under multiple stresses in an embedded system operating under such harsh environment conditions as set for Aerospace, Space, Nuclear, Submarine, Transport or Ground application. •The generalized BAZ model is refined and adapted to the GaN technology.•We have completed numerical Application on a Normally-off transistor GaN GS66508P-E03 650V enhancement mode manufactured by GaN Systems.•The concept of Maximum Rating limits and burnout conditions have been useful to derive reliability key parameters.•When multiple stresses are applied simultaneously, maximum rating limits values are imbricated to derive equivalent activation energy.•This helps to give reliability quantification rule for effective Ea and related condition of stress to assess RUL (Remaining Useful Life) condition.