Impact of (Quasi-)Ballistic Transport on Operation of Complementary Metal--Oxide--Semiconductor Inverters Based on Fully-Depleted Silicon-on-Insulator and Nanowire Devices

We have developed a numerical simulation methodology to analyze the impact of both device architecture and transport properties on static circuit performance. Firstly, to simulate ballistic transport, we have enhanced the pioneering approach of quasi-ballistic mobility proposed by Rhew and Lundstrom...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2011-01, Vol.50 (1), p.014103-014103-7
Hauptverfasser:	Martinie, Sébastien, Munteanu, Daniela, Le Carval, Gilles, Dura, Julien, Jaud, Marie-Anne, Barraud, Sylvain, Autran, Jean-Luc
Format:	Artikel
Sprache:	eng
Schlagworte:	Engineering Sciences Micro and nanotechnologies Microelectronics
Online-Zugang:	Volltext
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