Fast Neutron Detection With 4H-SiC Based Diode Detector up to 500 °C Ambient Temperature

In the framework of the European I-Smart project, optimal 4H-SiC based diode geometries were developed for high temperature neutron detection. Irradiation tests were conducted with 14 MeV fast neutrons supplied by a deuterium-tritium neutron generator with an average neutron yield of 4.04 \times {10...

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Veröffentlicht in:	IEEE transactions on nuclear science 2016-06, Vol.63 (3), p.1491-1498
Hauptverfasser:	Szalkai, D., Ferone, R., Issa, F., Klix, A., Lazar, M., Lyoussi, A., Ottaviani, L., Tutto, P., Vervisch, V.
Format:	Artikel
Sprache:	eng
Schlagworte:	Detectors Electric power Electron tubes Engineering Sciences Histograms Neutrons Silicon carbide Temperature measurement Temperature sensors
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