Monolayer doping of silicon through grafting a tailored molecular phosphorus precursor onto cxide-passivated silicon surfaces

Monolayer doping (MLD) of silicon substrates at the nanoscale is a powerful method to provide controlled doses of dopants and defect-free materials. However, this approach requires the deposition of a thick SiO2 cap layer to limit dopant evaporation during annealing. Here, we describe the controlled...

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Veröffentlicht in:	Chemistry of materials 2016-06, Vol.28 (11), p.3634-3640
Hauptverfasser:	Alphazan, Thibault, Mathey, Laurent, Schwarzwalder, Martin, Lin, Tsung-Han, Rossini, Aaron J., Wischert, Raphael, Enyedi, Virginie, Fontaine, Hervé, Veillerot, Marc, Lesage, Anne, Emsley, Lyndon, Veyre, Laurent, Martin, François, Thieuleux, Chloé, Copéret, Christophe
Format:	Artikel
Sprache:	eng
Schlagworte:	Analytical chemistry Chemical Sciences Material chemistry
Online-Zugang:	Volltext
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