Brewster "mode" in highly doped semiconductor layers: an all-optical technique to monitor doping concentration

We investigate highly-doped InAsSb layers lattice matched onto GaSb substrates by angular-dependent reflectance. A resonant dip is evidenced near the plasma frequency of thin layers. Based on Fresnel coefficient in the case of transverse electromagnetic wave, we interpret this resonance as due to th...

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Veröffentlicht in:	Optics express 2014-10, Vol.22 (20), p.24294-24303
Hauptverfasser:	Taliercio, Thierry, Guilengui, Vilianne Ntsame, Cerutti, Laurent, Tournié, Eric, Greffet, Jean-Jacques
Format:	Artikel
Sprache:	eng
Schlagworte:	Optics Physics
Online-Zugang:	Volltext
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