High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy

Time-resolved photoluminescence (PL), at T=8 K, is used to study a graded-width InGaN/GaN quantum well. Across the sample, the well width continuously varies from ∼5.5 to 2.0 nm corresponding to PL peak energies varying between 2.0 and 2.9 eV and to PL decay rates covering four orders of magnitude....

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Veröffentlicht in:	Applied physics letters 2001-02, Vol.78 (9), p.1252-1254
Hauptverfasser:	Lefebvre, P., Morel, A., Gallart, M., Taliercio, T., Allègre, J., Gil, B., Mathieu, H., Damilano, B., Grandjean, N., Massies, J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed Matter Engineering Sciences Materials Science Micro and nanotechnologies Microelectronics Optics Photonic Physics
Online-Zugang:	Volltext
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