Symmetric and Compact Single-Pole Multiple-Throw (SP7T, SP11T) RF MEMS Switches
This paper presents extremely compact single-pole multiple-throw radio frequency (RF) microelectromechanical system switches, SP7T and SP11T, based on a symmetric circular switch topology. The switch dimensions are 0.61 mm ×0.61 mm, which is smaller than typical CMOS Si-on-insulator switches. The SP...
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| Veröffentlicht in: | Journal of microelectromechanical systems 2015-06, Vol.24 (3), p.685-695 |
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| creator | Hyun-Ho Yang Yahiaoui, Achref Zareie, Hosein Blondy, Pierre Rebeiz, Gabriel M. |
| description | This paper presents extremely compact single-pole multiple-throw radio frequency (RF) microelectromechanical system switches, SP7T and SP11T, based on a symmetric circular switch topology. The switch dimensions are 0.61 mm ×0.61 mm, which is smaller than typical CMOS Si-on-insulator switches. The SP7T and SP11T switches, which are insensitive to stress gradient effects, achieve simulated contact and restoring forces of 0.3-0.4 mN (per a switch) at 90-100 V. The SP7T and SP11T switches also achieve isolation levels of 50-19 dB and 50-17 dB, respectively, and insertion loss of 0.3-1.2 dB and 0.3-1.7 dB, respectively, at 0.1-10 GHz. The measured ON-resistance is 4.5-2.5 Ω at 75-100 V, respectively, in an open environment and limited by contact contamination. The measured switching time is 7-10 μs. Cold-switched reliability tests of SP7T and SP11T switches show greater than 10 8 Hz with an RF power of 0.1-1 W, which is sufficient power handling capability for 3G and 4G systems. |
| doi_str_mv | 10.1109/JMEMS.2014.2344694 |
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The switch dimensions are 0.61 mm ×0.61 mm, which is smaller than typical CMOS Si-on-insulator switches. The SP7T and SP11T switches, which are insensitive to stress gradient effects, achieve simulated contact and restoring forces of 0.3-0.4 mN (per a switch) at 90-100 V. The SP7T and SP11T switches also achieve isolation levels of 50-19 dB and 50-17 dB, respectively, and insertion loss of 0.3-1.2 dB and 0.3-1.7 dB, respectively, at 0.1-10 GHz. The measured ON-resistance is 4.5-2.5 Ω at 75-100 V, respectively, in an open environment and limited by contact contamination. The measured switching time is 7-10 μs. Cold-switched reliability tests of SP7T and SP11T switches show greater than 10 8 Hz with an RF power of 0.1-1 W, which is sufficient power handling capability for 3G and 4G systems.</description><identifier>ISSN: 1057-7157</identifier><identifier>EISSN: 1941-0158</identifier><identifier>DOI: 10.1109/JMEMS.2014.2344694</identifier><identifier>CODEN: JMIYET</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Analytical models ; Ceramics ; contact switch ; Contacts ; electrostatic relay ; Engineering Sciences ; Force ; Manganese ; metal-contact ; Micro and nanotechnologies ; Microelectromechanical systems ; Microelectronics ; Radio frequency ; Radio frequency microelectromechanical systems (RF MEMS) ; Springs ; Stress ; switching networks</subject><ispartof>Journal of microelectromechanical systems, 2015-06, Vol.24 (3), p.685-695</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Jun 2015</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c469t-8ff081b954cbc766a35e8dc2aa8074321334042476d2db95b9c161b4848528d3</citedby><cites>FETCH-LOGICAL-c469t-8ff081b954cbc766a35e8dc2aa8074321334042476d2db95b9c161b4848528d3</cites><orcidid>0000-0001-5439-5069</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6877608$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>230,314,780,784,796,885,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6877608$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttps://hal.science/hal-01276126$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Hyun-Ho Yang</creatorcontrib><creatorcontrib>Yahiaoui, Achref</creatorcontrib><creatorcontrib>Zareie, Hosein</creatorcontrib><creatorcontrib>Blondy, Pierre</creatorcontrib><creatorcontrib>Rebeiz, Gabriel M.</creatorcontrib><title>Symmetric and Compact Single-Pole Multiple-Throw (SP7T, SP11T) RF MEMS Switches</title><title>Journal of microelectromechanical systems</title><addtitle>JMEMS</addtitle><description>This paper presents extremely compact single-pole multiple-throw radio frequency (RF) microelectromechanical system switches, SP7T and SP11T, based on a symmetric circular switch topology. The switch dimensions are 0.61 mm ×0.61 mm, which is smaller than typical CMOS Si-on-insulator switches. The SP7T and SP11T switches, which are insensitive to stress gradient effects, achieve simulated contact and restoring forces of 0.3-0.4 mN (per a switch) at 90-100 V. The SP7T and SP11T switches also achieve isolation levels of 50-19 dB and 50-17 dB, respectively, and insertion loss of 0.3-1.2 dB and 0.3-1.7 dB, respectively, at 0.1-10 GHz. The measured ON-resistance is 4.5-2.5 Ω at 75-100 V, respectively, in an open environment and limited by contact contamination. The measured switching time is 7-10 μs. Cold-switched reliability tests of SP7T and SP11T switches show greater than 10 8 Hz with an RF power of 0.1-1 W, which is sufficient power handling capability for 3G and 4G systems.</description><subject>Analytical models</subject><subject>Ceramics</subject><subject>contact switch</subject><subject>Contacts</subject><subject>electrostatic relay</subject><subject>Engineering Sciences</subject><subject>Force</subject><subject>Manganese</subject><subject>metal-contact</subject><subject>Micro and nanotechnologies</subject><subject>Microelectromechanical systems</subject><subject>Microelectronics</subject><subject>Radio frequency</subject><subject>Radio frequency microelectromechanical systems (RF MEMS)</subject><subject>Springs</subject><subject>Stress</subject><subject>switching networks</subject><issn>1057-7157</issn><issn>1941-0158</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kF9PwjAUxRejiYh-AX1p4oskDnu7ru0eCQHRQCBu703XdTKysbkNCd_ezhGe7p_8zr0nx3EeAY8BcPD2uZqtwjHBQMfEo5QF9MoZQEDBxeCLa9tjn7scfH7r3DXNDluSCjZw1uGpKExbZxqpfYKmZVEp3aIw23_nxt2UuUGrQ95mlZ2ibV0e0Uu44dErCjcA0Qh9zVH3GoXHrNVb09w7N6nKG_NwrkMnms-i6cJdrt8_ppOlq6251hVpigXEgU91rDljyvONSDRRSmBOPQKeRzEllLOEJBaLAw0MYiqo8IlIvKEz6s9uVS6rOitUfZKlyuRispTdDgPhDAj7Bcs-92xVlz8H07RyVx7qvXUngQnGhMDUtxTpKV2XTVOb9HIWsOwylv8Zyy5jec7Yip56UWaMuQiY4Jxh4f0BzhtzUw</recordid><startdate>20150601</startdate><enddate>20150601</enddate><creator>Hyun-Ho Yang</creator><creator>Yahiaoui, Achref</creator><creator>Zareie, Hosein</creator><creator>Blondy, Pierre</creator><creator>Rebeiz, Gabriel M.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><general>Institute of Electrical and Electronics Engineers</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7TB</scope><scope>7U5</scope><scope>8FD</scope><scope>FR3</scope><scope>L7M</scope><scope>1XC</scope><orcidid>https://orcid.org/0000-0001-5439-5069</orcidid></search><sort><creationdate>20150601</creationdate><title>Symmetric and Compact Single-Pole Multiple-Throw (SP7T, SP11T) RF MEMS Switches</title><author>Hyun-Ho Yang ; Yahiaoui, Achref ; Zareie, Hosein ; Blondy, Pierre ; Rebeiz, Gabriel M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c469t-8ff081b954cbc766a35e8dc2aa8074321334042476d2db95b9c161b4848528d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Analytical models</topic><topic>Ceramics</topic><topic>contact switch</topic><topic>Contacts</topic><topic>electrostatic relay</topic><topic>Engineering Sciences</topic><topic>Force</topic><topic>Manganese</topic><topic>metal-contact</topic><topic>Micro and nanotechnologies</topic><topic>Microelectromechanical systems</topic><topic>Microelectronics</topic><topic>Radio frequency</topic><topic>Radio frequency microelectromechanical systems (RF MEMS)</topic><topic>Springs</topic><topic>Stress</topic><topic>switching networks</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hyun-Ho Yang</creatorcontrib><creatorcontrib>Yahiaoui, Achref</creatorcontrib><creatorcontrib>Zareie, Hosein</creatorcontrib><creatorcontrib>Blondy, Pierre</creatorcontrib><creatorcontrib>Rebeiz, Gabriel M.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005–Present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Journal of microelectromechanical systems</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Hyun-Ho Yang</au><au>Yahiaoui, Achref</au><au>Zareie, Hosein</au><au>Blondy, Pierre</au><au>Rebeiz, Gabriel M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Symmetric and Compact Single-Pole Multiple-Throw (SP7T, SP11T) RF MEMS Switches</atitle><jtitle>Journal of microelectromechanical systems</jtitle><stitle>JMEMS</stitle><date>2015-06-01</date><risdate>2015</risdate><volume>24</volume><issue>3</issue><spage>685</spage><epage>695</epage><pages>685-695</pages><issn>1057-7157</issn><eissn>1941-0158</eissn><coden>JMIYET</coden><abstract>This paper presents extremely compact single-pole multiple-throw radio frequency (RF) microelectromechanical system switches, SP7T and SP11T, based on a symmetric circular switch topology. The switch dimensions are 0.61 mm ×0.61 mm, which is smaller than typical CMOS Si-on-insulator switches. The SP7T and SP11T switches, which are insensitive to stress gradient effects, achieve simulated contact and restoring forces of 0.3-0.4 mN (per a switch) at 90-100 V. The SP7T and SP11T switches also achieve isolation levels of 50-19 dB and 50-17 dB, respectively, and insertion loss of 0.3-1.2 dB and 0.3-1.7 dB, respectively, at 0.1-10 GHz. The measured ON-resistance is 4.5-2.5 Ω at 75-100 V, respectively, in an open environment and limited by contact contamination. The measured switching time is 7-10 μs. Cold-switched reliability tests of SP7T and SP11T switches show greater than 10 8 Hz with an RF power of 0.1-1 W, which is sufficient power handling capability for 3G and 4G systems.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/JMEMS.2014.2344694</doi><tpages>11</tpages><orcidid>https://orcid.org/0000-0001-5439-5069</orcidid></addata></record> |
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| subjects | Analytical models Ceramics contact switch Contacts electrostatic relay Engineering Sciences Force Manganese metal-contact Micro and nanotechnologies Microelectromechanical systems Microelectronics Radio frequency Radio frequency microelectromechanical systems (RF MEMS) Springs Stress switching networks |
| title | Symmetric and Compact Single-Pole Multiple-Throw (SP7T, SP11T) RF MEMS Switches |
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