Hole injection contribution to transport mechanisms in metal/p−/p++ and metal/oxide/p−/p++ diamond structures

Heterostructures such as Schottky diodes and metal/oxide/ semiconductor structures are the building blocks of diamond electronic devices. They are able to carry large current densities, up to several kA cm−2, if a heavily boron‐doped layer (p++) is included in the semiconducting stack, thus affordin...

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Veröffentlicht in:	Physica status solidi. A, Applications and materials science Applications and materials science, 2015-11, Vol.212 (11), p.2501-2506
Hauptverfasser:	Muret, P., Eon, D., Traoré, A., Maréchal, A., Pernot, J., Gheeraert, E.
Format:	Artikel
Sprache:	eng
Schlagworte:	Carrier density charge carrier transport Current density Devices Diamond Diamonds electronic devices Engineering Sciences Ionization Mathematical models metal-oxide-semiconductor structures Micro and nanotechnologies Microelectronics Oxides Semiconductors
Online-Zugang:	Volltext
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