Memristive and neuromorphic behavior in a Li x CoO 2 nanobattery

The phenomenon of resistive switching (RS), which was initially linked to non-volatile resistive memory applications, has recently also been associated with the concept of memristors, whose adjustable multilevel resistance characteristics open up unforeseen perspectives in cognitive computing. Herei...

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Veröffentlicht in:Scientific reports 2015-01, Vol.5
Hauptverfasser: Mai, V H, Moradpour, A., Auban Senzier, P., Pasquier, C, Wang, K, Rozenberg, M. J., Giapintzakis, J., Mihailescu, C N, Ortanidou, C M, Svoukis, E, Breza, A., Lioutas, Ch. B., Franger, S., Revcolevschi, A., Maroutian, T., Lecoeur, P., Aubert, P, Agnus, G., Salot, R., A. Albouy, P., Weil, R, Alamarguy, D., March, K, Jomard, F., Chrétien, Pascal, Schneegans, O.
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container_title Scientific reports
container_volume 5
creator Mai, V H
Moradpour, A.
Auban Senzier, P.
Pasquier, C
Wang, K
Rozenberg, M. J.
Giapintzakis, J.
Mihailescu, C N
Ortanidou, C M
Svoukis, E
Breza, A.
Lioutas, Ch. B.
Franger, S.
Revcolevschi, A.
Maroutian, T.
Lecoeur, P.
Aubert, P
Agnus, G.
Salot, R.
A. Albouy, P.
Weil, R
Alamarguy, D.
March, K
Jomard, F.
Chrétien, Pascal
Schneegans, O.
description The phenomenon of resistive switching (RS), which was initially linked to non-volatile resistive memory applications, has recently also been associated with the concept of memristors, whose adjustable multilevel resistance characteristics open up unforeseen perspectives in cognitive computing. Herein, we demonstrate that the resistance states of Li(x)CoO2 thin film-based metal-insulator-metal (MIM) solid-state cells can be tuned by sequential programming voltage pulses, and that these resistance states are dramatically dependent on the pulses input rate, hence emulating biological synapse plasticity. In addition, we identify the underlying electrochemical processes of RS in our MIM cells, which also reveal a nanobattery-like behavior, leading to the generation of electrical signals that bring an unprecedented new dimension to the connection between memristors and neuromorphic systems. Therefore, these LixCoO2-based MIM devices allow for a combination of possibilities, offering new perspectives of usage in nanoelectronics and bio-inspired neuromorphic circuits.
doi_str_mv 10.1038/srep07761
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fullrecord <record><control><sourceid>hal</sourceid><recordid>TN_cdi_hal_primary_oai_HAL_hal_01223233v1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>oai_HAL_hal_01223233v1</sourcerecordid><originalsourceid>FETCH-LOGICAL-h104t-8be8e0e5491c8e18c54cb38133b848d6673bc2b86dd65f380656dba148f4d6583</originalsourceid><addsrcrecordid>eNpNjz1PwzAURS0EElXpwD_wyhDw81deNqoIKFJQl3aO7MRRjJo4ckJE_z1BdOAu5-oMV7qE3AN7BCbwaYxuYGmq4YqsOJMq4YLz63_9lmzG8ZMtUTyTkK3I84froh8nPztq-pr27iuGLsSh9RW1rjWzD5H6nhpaePpN87CnnPamD9ZMk4vnO3LTmNPoNheuyfH15ZDvkmL_9p5vi6QFJqcErUPHnJIZVOgAKyUrKxCEsCix1joVtuIWdV1r1QhkWunaGpDYyMWgWJOHv93WnMoh-s7EcxmML3fbovx1DPhyUYgZxA8IbEvZ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Memristive and neuromorphic behavior in a Li x CoO 2 nanobattery</title><source>Open Access: Nature Open Access</source><source>Full-Text Journals in Chemistry (Open access)</source><source>DOAJ Directory of Open Access Journals</source><source>SpringerOpen (Open Access)</source><source>Free E-Journal (出版社公開部分のみ)</source><source>PubMed</source><creator>Mai, V H ; Moradpour, A. ; Auban Senzier, P. ; Pasquier, C ; Wang, K ; Rozenberg, M. J. ; Giapintzakis, J. ; Mihailescu, C N ; Ortanidou, C M ; Svoukis, E ; Breza, A. ; Lioutas, Ch. B. ; Franger, S. ; Revcolevschi, A. ; Maroutian, T. ; Lecoeur, P. ; Aubert, P ; Agnus, G. ; Salot, R. ; A. Albouy, P. ; Weil, R ; Alamarguy, D. ; March, K ; Jomard, F. ; Chrétien, Pascal ; Schneegans, O.</creator><creatorcontrib>Mai, V H ; Moradpour, A. ; Auban Senzier, P. ; Pasquier, C ; Wang, K ; Rozenberg, M. J. ; Giapintzakis, J. ; Mihailescu, C N ; Ortanidou, C M ; Svoukis, E ; Breza, A. ; Lioutas, Ch. B. ; Franger, S. ; Revcolevschi, A. ; Maroutian, T. ; Lecoeur, P. ; Aubert, P ; Agnus, G. ; Salot, R. ; A. Albouy, P. ; Weil, R ; Alamarguy, D. ; March, K ; Jomard, F. ; Chrétien, Pascal ; Schneegans, O.</creatorcontrib><description>The phenomenon of resistive switching (RS), which was initially linked to non-volatile resistive memory applications, has recently also been associated with the concept of memristors, whose adjustable multilevel resistance characteristics open up unforeseen perspectives in cognitive computing. Herein, we demonstrate that the resistance states of Li(x)CoO2 thin film-based metal-insulator-metal (MIM) solid-state cells can be tuned by sequential programming voltage pulses, and that these resistance states are dramatically dependent on the pulses input rate, hence emulating biological synapse plasticity. In addition, we identify the underlying electrochemical processes of RS in our MIM cells, which also reveal a nanobattery-like behavior, leading to the generation of electrical signals that bring an unprecedented new dimension to the connection between memristors and neuromorphic systems. Therefore, these LixCoO2-based MIM devices allow for a combination of possibilities, offering new perspectives of usage in nanoelectronics and bio-inspired neuromorphic circuits.</description><identifier>ISSN: 2045-2322</identifier><identifier>EISSN: 2045-2322</identifier><identifier>DOI: 10.1038/srep07761</identifier><language>eng</language><publisher>Nature Publishing Group</publisher><subject>Physics</subject><ispartof>Scientific reports, 2015-01, Vol.5</ispartof><rights>Attribution - NonCommercial - NoDerivatives</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0009-0005-5177-1360 ; 0000-0001-5535-391X ; 0000-0002-2280-7986 ; 0000-0001-7617-3029 ; 0000-0001-7672-4759 ; 0000-0001-9741-3327</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,860,881,27901,27902</link.rule.ids><backlink>$$Uhttps://hal.sorbonne-universite.fr/hal-01223233$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Mai, V H</creatorcontrib><creatorcontrib>Moradpour, A.</creatorcontrib><creatorcontrib>Auban Senzier, P.</creatorcontrib><creatorcontrib>Pasquier, C</creatorcontrib><creatorcontrib>Wang, K</creatorcontrib><creatorcontrib>Rozenberg, M. J.</creatorcontrib><creatorcontrib>Giapintzakis, J.</creatorcontrib><creatorcontrib>Mihailescu, C N</creatorcontrib><creatorcontrib>Ortanidou, C M</creatorcontrib><creatorcontrib>Svoukis, E</creatorcontrib><creatorcontrib>Breza, A.</creatorcontrib><creatorcontrib>Lioutas, Ch. B.</creatorcontrib><creatorcontrib>Franger, S.</creatorcontrib><creatorcontrib>Revcolevschi, A.</creatorcontrib><creatorcontrib>Maroutian, T.</creatorcontrib><creatorcontrib>Lecoeur, P.</creatorcontrib><creatorcontrib>Aubert, P</creatorcontrib><creatorcontrib>Agnus, G.</creatorcontrib><creatorcontrib>Salot, R.</creatorcontrib><creatorcontrib>A. Albouy, P.</creatorcontrib><creatorcontrib>Weil, R</creatorcontrib><creatorcontrib>Alamarguy, D.</creatorcontrib><creatorcontrib>March, K</creatorcontrib><creatorcontrib>Jomard, F.</creatorcontrib><creatorcontrib>Chrétien, Pascal</creatorcontrib><creatorcontrib>Schneegans, O.</creatorcontrib><title>Memristive and neuromorphic behavior in a Li x CoO 2 nanobattery</title><title>Scientific reports</title><description>The phenomenon of resistive switching (RS), which was initially linked to non-volatile resistive memory applications, has recently also been associated with the concept of memristors, whose adjustable multilevel resistance characteristics open up unforeseen perspectives in cognitive computing. Herein, we demonstrate that the resistance states of Li(x)CoO2 thin film-based metal-insulator-metal (MIM) solid-state cells can be tuned by sequential programming voltage pulses, and that these resistance states are dramatically dependent on the pulses input rate, hence emulating biological synapse plasticity. In addition, we identify the underlying electrochemical processes of RS in our MIM cells, which also reveal a nanobattery-like behavior, leading to the generation of electrical signals that bring an unprecedented new dimension to the connection between memristors and neuromorphic systems. Therefore, these LixCoO2-based MIM devices allow for a combination of possibilities, offering new perspectives of usage in nanoelectronics and bio-inspired neuromorphic circuits.</description><subject>Physics</subject><issn>2045-2322</issn><issn>2045-2322</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNpNjz1PwzAURS0EElXpwD_wyhDw81deNqoIKFJQl3aO7MRRjJo4ckJE_z1BdOAu5-oMV7qE3AN7BCbwaYxuYGmq4YqsOJMq4YLz63_9lmzG8ZMtUTyTkK3I84froh8nPztq-pr27iuGLsSh9RW1rjWzD5H6nhpaePpN87CnnPamD9ZMk4vnO3LTmNPoNheuyfH15ZDvkmL_9p5vi6QFJqcErUPHnJIZVOgAKyUrKxCEsCix1joVtuIWdV1r1QhkWunaGpDYyMWgWJOHv93WnMoh-s7EcxmML3fbovx1DPhyUYgZxA8IbEvZ</recordid><startdate>20150114</startdate><enddate>20150114</enddate><creator>Mai, V H</creator><creator>Moradpour, A.</creator><creator>Auban Senzier, P.</creator><creator>Pasquier, C</creator><creator>Wang, K</creator><creator>Rozenberg, M. J.</creator><creator>Giapintzakis, J.</creator><creator>Mihailescu, C N</creator><creator>Ortanidou, C M</creator><creator>Svoukis, E</creator><creator>Breza, A.</creator><creator>Lioutas, Ch. B.</creator><creator>Franger, S.</creator><creator>Revcolevschi, A.</creator><creator>Maroutian, T.</creator><creator>Lecoeur, P.</creator><creator>Aubert, P</creator><creator>Agnus, G.</creator><creator>Salot, R.</creator><creator>A. Albouy, P.</creator><creator>Weil, R</creator><creator>Alamarguy, D.</creator><creator>March, K</creator><creator>Jomard, F.</creator><creator>Chrétien, Pascal</creator><creator>Schneegans, O.</creator><general>Nature Publishing Group</general><scope>1XC</scope><scope>VOOES</scope><orcidid>https://orcid.org/0009-0005-5177-1360</orcidid><orcidid>https://orcid.org/0000-0001-5535-391X</orcidid><orcidid>https://orcid.org/0000-0002-2280-7986</orcidid><orcidid>https://orcid.org/0000-0001-7617-3029</orcidid><orcidid>https://orcid.org/0000-0001-7672-4759</orcidid><orcidid>https://orcid.org/0000-0001-9741-3327</orcidid></search><sort><creationdate>20150114</creationdate><title>Memristive and neuromorphic behavior in a Li x CoO 2 nanobattery</title><author>Mai, V H ; Moradpour, A. ; Auban Senzier, P. ; Pasquier, C ; Wang, K ; Rozenberg, M. J. ; Giapintzakis, J. ; Mihailescu, C N ; Ortanidou, C M ; Svoukis, E ; Breza, A. ; Lioutas, Ch. B. ; Franger, S. ; Revcolevschi, A. ; Maroutian, T. ; Lecoeur, P. ; Aubert, P ; Agnus, G. ; Salot, R. ; A. Albouy, P. ; Weil, R ; Alamarguy, D. ; March, K ; Jomard, F. ; Chrétien, Pascal ; Schneegans, O.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-h104t-8be8e0e5491c8e18c54cb38133b848d6673bc2b86dd65f380656dba148f4d6583</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Mai, V H</creatorcontrib><creatorcontrib>Moradpour, A.</creatorcontrib><creatorcontrib>Auban Senzier, P.</creatorcontrib><creatorcontrib>Pasquier, C</creatorcontrib><creatorcontrib>Wang, K</creatorcontrib><creatorcontrib>Rozenberg, M. J.</creatorcontrib><creatorcontrib>Giapintzakis, J.</creatorcontrib><creatorcontrib>Mihailescu, C N</creatorcontrib><creatorcontrib>Ortanidou, C M</creatorcontrib><creatorcontrib>Svoukis, E</creatorcontrib><creatorcontrib>Breza, A.</creatorcontrib><creatorcontrib>Lioutas, Ch. B.</creatorcontrib><creatorcontrib>Franger, S.</creatorcontrib><creatorcontrib>Revcolevschi, A.</creatorcontrib><creatorcontrib>Maroutian, T.</creatorcontrib><creatorcontrib>Lecoeur, P.</creatorcontrib><creatorcontrib>Aubert, P</creatorcontrib><creatorcontrib>Agnus, G.</creatorcontrib><creatorcontrib>Salot, R.</creatorcontrib><creatorcontrib>A. Albouy, P.</creatorcontrib><creatorcontrib>Weil, R</creatorcontrib><creatorcontrib>Alamarguy, D.</creatorcontrib><creatorcontrib>March, K</creatorcontrib><creatorcontrib>Jomard, F.</creatorcontrib><creatorcontrib>Chrétien, Pascal</creatorcontrib><creatorcontrib>Schneegans, O.</creatorcontrib><collection>Hyper Article en Ligne (HAL)</collection><collection>Hyper Article en Ligne (HAL) (Open Access)</collection><jtitle>Scientific reports</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Mai, V H</au><au>Moradpour, A.</au><au>Auban Senzier, P.</au><au>Pasquier, C</au><au>Wang, K</au><au>Rozenberg, M. J.</au><au>Giapintzakis, J.</au><au>Mihailescu, C N</au><au>Ortanidou, C M</au><au>Svoukis, E</au><au>Breza, A.</au><au>Lioutas, Ch. B.</au><au>Franger, S.</au><au>Revcolevschi, A.</au><au>Maroutian, T.</au><au>Lecoeur, P.</au><au>Aubert, P</au><au>Agnus, G.</au><au>Salot, R.</au><au>A. Albouy, P.</au><au>Weil, R</au><au>Alamarguy, D.</au><au>March, K</au><au>Jomard, F.</au><au>Chrétien, Pascal</au><au>Schneegans, O.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Memristive and neuromorphic behavior in a Li x CoO 2 nanobattery</atitle><jtitle>Scientific reports</jtitle><date>2015-01-14</date><risdate>2015</risdate><volume>5</volume><issn>2045-2322</issn><eissn>2045-2322</eissn><abstract>The phenomenon of resistive switching (RS), which was initially linked to non-volatile resistive memory applications, has recently also been associated with the concept of memristors, whose adjustable multilevel resistance characteristics open up unforeseen perspectives in cognitive computing. Herein, we demonstrate that the resistance states of Li(x)CoO2 thin film-based metal-insulator-metal (MIM) solid-state cells can be tuned by sequential programming voltage pulses, and that these resistance states are dramatically dependent on the pulses input rate, hence emulating biological synapse plasticity. In addition, we identify the underlying electrochemical processes of RS in our MIM cells, which also reveal a nanobattery-like behavior, leading to the generation of electrical signals that bring an unprecedented new dimension to the connection between memristors and neuromorphic systems. Therefore, these LixCoO2-based MIM devices allow for a combination of possibilities, offering new perspectives of usage in nanoelectronics and bio-inspired neuromorphic circuits.</abstract><pub>Nature Publishing Group</pub><doi>10.1038/srep07761</doi><orcidid>https://orcid.org/0009-0005-5177-1360</orcidid><orcidid>https://orcid.org/0000-0001-5535-391X</orcidid><orcidid>https://orcid.org/0000-0002-2280-7986</orcidid><orcidid>https://orcid.org/0000-0001-7617-3029</orcidid><orcidid>https://orcid.org/0000-0001-7672-4759</orcidid><orcidid>https://orcid.org/0000-0001-9741-3327</orcidid><oa>free_for_read</oa></addata></record>
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title Memristive and neuromorphic behavior in a Li x CoO 2 nanobattery
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-01T08%3A13%3A58IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-hal&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Memristive%20and%20neuromorphic%20behavior%20in%20a%20Li%20x%20CoO%202%20nanobattery&rft.jtitle=Scientific%20reports&rft.au=Mai,%20V%20H&rft.date=2015-01-14&rft.volume=5&rft.issn=2045-2322&rft.eissn=2045-2322&rft_id=info:doi/10.1038/srep07761&rft_dat=%3Chal%3Eoai_HAL_hal_01223233v1%3C/hal%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true