Bandgap energy bowing parameter of strained and relaxed InGaN layers

Bandgap energy bowing parameter of strained and relaxed InGaN layers

This paper focuses on the determination of the bandgap energy bowing parameter of strained and relaxed In sub(x)Ga sub(1-x)N layers. Samples are grown by metal organic vapor phase epitaxy on GaN template substrate for indium compositions in the range of 0

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Veröffentlicht in:Optical materials express 2014-05, Vol.4 (5), p.1030-1041
Hauptverfasser: Orsal, G., El Gmili, Y., Fressengeas, N., Streque, J., Djerboub, R., Moudakir, T., Sundaram, S., Ougazzaden, A., Salvestrini, J.P.
Format: Artikel
Sprache:eng
Schlagworte:
Bowing
Cathodoluminescence
Condensed Matter
Emission
Energy measurement
Gallium nitrides
Indium
Indium gallium nitrides
Materials Science
Optics
Physics
Three dimensional
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Zusammenfassung:This paper focuses on the determination of the bandgap energy bowing parameter of strained and relaxed In sub(x)Ga sub(1-x)N layers. Samples are grown by metal organic vapor phase epitaxy on GaN template substrate for indium compositions in the range of 0
ISSN:2159-3930
2159-3930
DOI:10.1364/OME.4.001030