BAlN thin layers for deep UV applications

In this work, wurtzite BAlN layers with boron composition as high as 12% were successfully grown by MOVPE. The growth was performed at 650 °C and then annealed at 1020 °C. Low temperature growth was used in order to alleviate B‐rich phase poisoning under high TEB/III ratio. The growth was performed...

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Veröffentlicht in:	Physica status solidi. A, Applications and materials science Applications and materials science, 2015-04, Vol.212 (4), p.745-750
Hauptverfasser:	Li, Xin, Sundaram, Suresh, Gmili, Youssef El, Moudakir, Tarik, Genty, Frédéric, Bouchoule, Sophie, Patriarche, Gilles, Dupuis, Russell D., Voss, Paul L., Salvestrini, Jean-Paul, Ougazzaden, Abdallah
Format:	Artikel
Sprache:	eng
Schlagworte:	BA1N Boron Columnar structure Devices Epitaxy Gallium nitrides III-nitrides semiconductors Materials science MOVPE Optics Physics Wurtzite
Online-Zugang:	Volltext
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