InP HBT Thermal Management by Transferring to High Thermal Conductivity Silicon Substrate
We report about the self-heating management of an InP double heterojunction bipolar transistor (DHBT) by the way of the thermal resistance. In order to reduce this latter, an AlInP/GaAsSb DHBT has been transferred on a silicon substrate offering a high thermal conductivity. According to our thermal...
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| Veröffentlicht in: | IEEE electron device letters 2014-10, Vol.35 (10), p.1010-1012 |
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| container_end_page | 1012 |
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| container_issue | 10 |
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| container_title | IEEE electron device letters |
| container_volume | 35 |
| creator | Thiam, Arame Roelens, Yannick Coinon, Christophe Avramovic, Vanessa Grandchamp, Brice Ducatteau, Damien Wallart, Xavier Maneux, Cristell Zaknoune, Mohammed |
| description | We report about the self-heating management of an InP double heterojunction bipolar transistor (DHBT) by the way of the thermal resistance. In order to reduce this latter, an AlInP/GaAsSb DHBT has been transferred on a silicon substrate offering a high thermal conductivity. According to our thermal resistance measurements on a 0.8 × 6 μm 2 DHBT, a low thermal resistance of 1625 K/W is obtained, 65 % lower than for the same device fabricated on its own substrate of InP and which exhibited a value of 4452 K/W. |
| doi_str_mv | 10.1109/LED.2014.2347256 |
| format | Article |
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In order to reduce this latter, an AlInP/GaAsSb DHBT has been transferred on a silicon substrate offering a high thermal conductivity. According to our thermal resistance measurements on a 0.8 × 6 μm 2 DHBT, a low thermal resistance of 1625 K/W is obtained, 65 % lower than for the same device fabricated on its own substrate of InP and which exhibited a value of 4452 K/W.</description><subject>Conductivity</subject><subject>DHBT</subject><subject>Engineering Sciences</subject><subject>high thermal conductivity</subject><subject>Indium phosphide</subject><subject>Micro and nanotechnologies</subject><subject>Microelectronics</subject><subject>Self heating</subject><subject>Silicon</subject><subject>Substrates</subject><subject>Thermal conductivity</subject><subject>Thermal resistance</subject><subject>transferred-substrate</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kMFLwzAUh4MoOKd3wUuuHjpfmqRJjjqnG1QUVg-eQtKkW6RrJe0G--_t2NjpweP7focPoXsCE0JAPeWz10kKhE1SykTKsws0IpzLBHhGL9EIBCMJJZBdo5uu-4WBZIKN0M-i-cLzlwIXax83psYfpjErv_FNj-0eF9E0XeVjDM0K9y2eh9X6jE7bxm3LPuxCv8fLUIeybfBya7s-mt7foqvK1J2_O90x-n6bFdN5kn--L6bPeVLSjPaJslamFaGpIFI6IrhThhDJQVhSQSVcBYx7VQpfgkuVddIBq5Th1nLqpKJj9HjcXZta_8WwMXGvWxP0_DnXhx8MeUAytiMDC0e2jG3XRV-dBQL6kFEPGfUhoz5lHJSHoxK892c8k4oNOP0HZyttbQ</recordid><startdate>201410</startdate><enddate>201410</enddate><creator>Thiam, Arame</creator><creator>Roelens, Yannick</creator><creator>Coinon, Christophe</creator><creator>Avramovic, Vanessa</creator><creator>Grandchamp, Brice</creator><creator>Ducatteau, Damien</creator><creator>Wallart, Xavier</creator><creator>Maneux, Cristell</creator><creator>Zaknoune, Mohammed</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>1XC</scope><orcidid>https://orcid.org/0000-0001-9125-5372</orcidid><orcidid>https://orcid.org/0000-0001-8195-4196</orcidid><orcidid>https://orcid.org/0000-0002-0915-0043</orcidid><orcidid>https://orcid.org/0000-0002-7790-3393</orcidid><orcidid>https://orcid.org/0000-0002-0259-5373</orcidid></search><sort><creationdate>201410</creationdate><title>InP HBT Thermal Management by Transferring to High Thermal Conductivity Silicon Substrate</title><author>Thiam, Arame ; Roelens, Yannick ; Coinon, Christophe ; Avramovic, Vanessa ; Grandchamp, Brice ; Ducatteau, Damien ; Wallart, Xavier ; Maneux, Cristell ; Zaknoune, Mohammed</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c363t-9bb82f1327188d175d9a118507b1f0f7df045e9c7ec0d29bd8d04f9a5bb53d893</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Conductivity</topic><topic>DHBT</topic><topic>Engineering Sciences</topic><topic>high thermal conductivity</topic><topic>Indium phosphide</topic><topic>Micro and nanotechnologies</topic><topic>Microelectronics</topic><topic>Self heating</topic><topic>Silicon</topic><topic>Substrates</topic><topic>Thermal conductivity</topic><topic>Thermal resistance</topic><topic>transferred-substrate</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Thiam, Arame</creatorcontrib><creatorcontrib>Roelens, Yannick</creatorcontrib><creatorcontrib>Coinon, Christophe</creatorcontrib><creatorcontrib>Avramovic, Vanessa</creatorcontrib><creatorcontrib>Grandchamp, Brice</creatorcontrib><creatorcontrib>Ducatteau, Damien</creatorcontrib><creatorcontrib>Wallart, Xavier</creatorcontrib><creatorcontrib>Maneux, Cristell</creatorcontrib><creatorcontrib>Zaknoune, Mohammed</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Thiam, Arame</au><au>Roelens, Yannick</au><au>Coinon, Christophe</au><au>Avramovic, Vanessa</au><au>Grandchamp, Brice</au><au>Ducatteau, Damien</au><au>Wallart, Xavier</au><au>Maneux, Cristell</au><au>Zaknoune, Mohammed</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>InP HBT Thermal Management by Transferring to High Thermal Conductivity Silicon Substrate</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2014-10</date><risdate>2014</risdate><volume>35</volume><issue>10</issue><spage>1010</spage><epage>1012</epage><pages>1010-1012</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>We report about the self-heating management of an InP double heterojunction bipolar transistor (DHBT) by the way of the thermal resistance. In order to reduce this latter, an AlInP/GaAsSb DHBT has been transferred on a silicon substrate offering a high thermal conductivity. According to our thermal resistance measurements on a 0.8 × 6 μm 2 DHBT, a low thermal resistance of 1625 K/W is obtained, 65 % lower than for the same device fabricated on its own substrate of InP and which exhibited a value of 4452 K/W.</abstract><pub>IEEE</pub><doi>10.1109/LED.2014.2347256</doi><tpages>3</tpages><orcidid>https://orcid.org/0000-0001-9125-5372</orcidid><orcidid>https://orcid.org/0000-0001-8195-4196</orcidid><orcidid>https://orcid.org/0000-0002-0915-0043</orcidid><orcidid>https://orcid.org/0000-0002-7790-3393</orcidid><orcidid>https://orcid.org/0000-0002-0259-5373</orcidid></addata></record> |
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| subjects | Conductivity DHBT Engineering Sciences high thermal conductivity Indium phosphide Micro and nanotechnologies Microelectronics Self heating Silicon Substrates Thermal conductivity Thermal resistance transferred-substrate |
| title | InP HBT Thermal Management by Transferring to High Thermal Conductivity Silicon Substrate |
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