InP HBT Thermal Management by Transferring to High Thermal Conductivity Silicon Substrate

InP HBT Thermal Management by Transferring to High Thermal Conductivity Silicon Substrate

We report about the self-heating management of an InP double heterojunction bipolar transistor (DHBT) by the way of the thermal resistance. In order to reduce this latter, an AlInP/GaAsSb DHBT has been transferred on a silicon substrate offering a high thermal conductivity. According to our thermal...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE electron device letters 2014-10, Vol.35 (10), p.1010-1012
Hauptverfasser: Thiam, Arame, Roelens, Yannick, Coinon, Christophe, Avramovic, Vanessa, Grandchamp, Brice, Ducatteau, Damien, Wallart, Xavier, Maneux, Cristell, Zaknoune, Mohammed
Format: Artikel
Sprache:eng
Schlagworte:
Conductivity
DHBT
Engineering Sciences
high thermal conductivity
Indium phosphide
Micro and nanotechnologies
Microelectronics
Self heating
Silicon
Substrates
Thermal conductivity
Thermal resistance
transferred-substrate
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We report about the self-heating management of an InP double heterojunction bipolar transistor (DHBT) by the way of the thermal resistance. In order to reduce this latter, an AlInP/GaAsSb DHBT has been transferred on a silicon substrate offering a high thermal conductivity. According to our thermal resistance measurements on a 0.8 × 6 μm 2 DHBT, a low thermal resistance of 1625 K/W is obtained, 65 % lower than for the same device fabricated on its own substrate of InP and which exhibited a value of 4452 K/W.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2014.2347256