Analysis of an ESD failure mechanism on a SiC MESFET

Efficient energy management become more and more crucial with increasing energy resource scarcity. Power electronic will play a major role in this field and thus require innovations like using wide band gap semiconductor to build power devices. SiC, GaN, diamond material-based devices are currently...

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Veröffentlicht in:	Microelectronics and reliability 2014-09, Vol.54 (9-10), p.2217-2221
Hauptverfasser:	Phulpin, T., Trémouilles, D., Isoird, K., Tournier, D., Godignon, P., Austin, P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electrical engineering. Electrical power engineering Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Engineering Sciences ESD Exact sciences and technology HBM robustness Parasitic transistor Power electronics, power supplies Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices SiC MESFET TCAD simulation TLP stress Transistors
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